This work describes a novel technique for simultaneously determining local temperature and thickness of a heavily doped Si heater having a submicron width by using two-wavelength thermoreflectance microscopy. The doped silicon line heater, whose thickness and width are, respectively, 480 nm and 900 nm, is fabricated by conventional microfabrication techniques on a fused silica wafer. The full width at half maximum (FWHM) of the focused laser beam is measured to be 2.00 μm and 2.28 μm for green (λ = 516 nm) and red (λ = 640 nm) lasers, respectively. Because the heater width is narrower than the focused laser beam size, the reflected beam contains background information (i.e., reflection from the fused silica substrate) in addition to the thermoreflectance signal from the doped silicon heater. With precise knowledge of the laser beam size, heater width, and exact location of the laser beam spot on the heater, one can quantitatively model the reflectance. In reality, however, due to the difficulty of aligning the laser beam with respect to the submicron-wide Si heater, precise determination of local temperature from thermoreflectance signal is not easily attained. In the present study, instead of aligning the laser beam to the center of the submicron silicon heater, the probe laser horizontally scans over a region of the heater. By taking into account the size of the focused laser beam and the width of the doped silicon heater, it is possible to determine the absolute temperature of a local region of the heater from the measured reflectance during the scanning, even though the width of the heater line is only 39% of the size of the laser beam.
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Sub-Beam Size Temperature Measurement of Heavily Doped Silicon Heater Using Two-Wavelength Thermoreflectance Microscopy
Jinsung Rho,
Jinsung Rho
Department of Mechanical Engineering,
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
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Bong Jae Lee
Bong Jae Lee
Department of Mechanical Engineering,
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
e-mail: bongjae.lee@kaist.ac.kr
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
e-mail: bongjae.lee@kaist.ac.kr
Search for other works by this author on:
Jinsung Rho
Department of Mechanical Engineering,
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
Bong Jae Lee
Department of Mechanical Engineering,
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
e-mail: bongjae.lee@kaist.ac.kr
Korea Advanced Institute of
Science and Technology,
Daejeon 34141, South Korea
e-mail: bongjae.lee@kaist.ac.kr
1Corresponding author.
Presented at the 2016 5th Micro/Nanoscale Heat & Mass Transfer International Conference. Paper No. MNHMT2016-6475.
Contributed by the Heat Transfer Division of ASME for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received June 18, 2016; final manuscript received November 8, 2016; published online February 7, 2017. Assoc. Editor: Zhuomin Zhang.
J. Heat Transfer. May 2017, 139(5): 052703 (8 pages)
Published Online: February 7, 2017
Article history
Received:
June 18, 2016
Revised:
November 8, 2016
Citation
Rho, J., and Jae Lee, B. (February 7, 2017). "Sub-Beam Size Temperature Measurement of Heavily Doped Silicon Heater Using Two-Wavelength Thermoreflectance Microscopy." ASME. J. Heat Transfer. May 2017; 139(5): 052703. https://doi.org/10.1115/1.4035251
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