This paper presents an assessment of four die-strength testing configurations using finite element analysis. The simulation indicates that ring-on-ring configuration is the best because it generates a uniform stress field on a large die surface area. The four-point-bend configuration ranks second and the three-point-bend configuration is third. The pin-on-ring configuration is the worst because the stress gradient is severe in the central region. To minimize uncertainty in the loading positions, it is advised that loading rings or bars with small radii be used.
1.
McHatton
, C.
, and Gumbert
, C. M.
, 1998, “Eliminating Backgrind Defects with Wet Chemical Etching
,” Solid State Technol.
0038-111X, 41
(11
), pp. 85
–90
.2.
Schraub
, F. A. T.
, 2002, “Automated Handling of Ultra-Thin Silicon Wafers
,” Solid State Technol.
0038-111X, 45
(9
), retrieved from http:∕∕sst.pennnet.comhttp:∕∕sst.pennnet.com3.
Savastiouk
, S.
, Siniaguine
, O.
, and Hammond
, M. L.
, 1998, “Atmospheric Downstream Plasma - a New Tool for Semiconductor Processing
,” Solid State Technol.
0038-111X, 41
(7
), pp. 133
–136
.4.
Savastiouk
, S.
, Siniaguine
, O.
, and Hammond
, M. L.
, 1998, “Atmospheric Downstream Plasma
,” European Semiconductor
, 20
(6
), pp. 31
–33
.5.
McGuire
, K.
, Danyluk
, S.
, Baker
, T. L.
, Rupnow
, J. W.
, and McLaughlin
, D.
, 1997, “The Influence of Backgrinding on the Fracture Strength of 100 mm Diameter (111) p-type Silicon Wafers
,” J. Mater. Sci.
0022-2461, 32
(4
), pp. 1017
–1024
.6.
Jeong
, S. M.
, Park
, S. E.
, Oh
, H. S.
, and Lee
, H. L.
, 2000, “Fracture Strength Evaluation of Semiconductor Silicon Wafering Process Induced Damage
,” Proceedings of the 15th Annual Meeting of the American Society for Precision Engineering
, Scottsdale, AZ, 22–27 October, pp. 119
–123
.7.
Hawkins
, G.
, Berg
, H.
, Lewis
, G.
, and Lofgran
, L.
, 1987, “Measurement of Silicon Strength as Affected by Wafer Back Processing
,” IEEE∕International Reliability Physics Symposium
, pp. 216
–223
.8.
Lee
, S. M.
, Sim
, S. M.
, Chung
, Y. W.
, Jang
Y. K.
, and Cho
, H. K.
, 1997, “Fracture Strength Measurement of Silicon Chips
,” Jpn. J. Appl. Phys., Part 1
0021-4922, 36
, pp. 3374
–3380
.9.
Lewis
, S.
, 1992, “Backgrinding Wafers for Maximum Die Strength
,” Semiconductor International
, July, pp. 86
–89
.10.
Lim
, T. B.
, 1989, “The Impact of Wafer Back Surface Finish on Chip Strength
,” IEEE∕International Reliability Physics Symposium
, pp. 131
–136
.11.
Timoshenko
, S. P.
, and Woinowsky-Krieger
, S.
1989, Theory of Plates and Shells
, McGraw-Hill
, Singapore.12.
Young
, W. C.
1975, Roark’s Formulas for Stress and Strain
, 6th ed., McGraw-Hill
, Singapore.13.
Chen
, C. P.
, and Leipold
, M. H.
, 1980, “Fracture Toughness of Silicon
,” Ceram. Bull.
0002-7812, 59
, pp. 469
–472
.14.
Pei
, Z. J.
, Billingsley
, S. R.
, and Miura
, S.
, 1999, “Grinding-Induced Subsurface Cracks in Silicon Wafers
,” Int. J. Mach. Tools Manuf.
0890-6955, 39
(7
), pp. 1103
–1116
.15.
Kessel
, C. G. M.
, Gee
, S. A.
, and Murphy
, J. J.
, 1983, “The Quality of Die-Attachment and Its Relationship to Stresses and Vertical Die-Cracking
,” Proc. 33rd ECC, CHMT, IEEE
, New York, pp. 237
–244
.Copyright © 2005
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