Far infrared Fizeau interferometry is developed and it is proposed as a tool for warpage measurement of microelectronics devices. The method provides a whole-field map of surface topography with a basic measurement sensitivity of 5.31 μm per fringe contour. The method is implemented by a compact apparatus using a computer controlled environmental chamber for real-time measurement. The method retains the simplicity of classical interferometry while providing wide applicability to dielectric rough surfaces. Roughness tolerance is achieved by utilizing a far infrared light (λ=10.6 μm). The detailed optical and mechanical configuration is described and selected applications are presented to demonstrate the applicability. The unique advantages of the method are discussed. [S1043-7398(00)01303-7]
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September 2000
Technical Papers
Warpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry1
K. Verma,
K. Verma
Lucent Technologies, 9999 Hamilton Blvd., Breinigsville, PA 18031
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B. Han, Mem. ASME
B. Han, Mem. ASME
Department of Mechanical Engineering, University of Maryland, College Partk, MD 20742
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K. Verma
Lucent Technologies, 9999 Hamilton Blvd., Breinigsville, PA 18031
B. Han, Mem. ASME
Department of Mechanical Engineering, University of Maryland, College Partk, MD 20742
Contributed by the Electrical and Electronic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received by the EEPD April 13, 1999; revised manuscript received December 20, 1999. Associate Technical Editor: A. Tay.
J. Electron. Packag. Sep 2000, 122(3): 227-232 (6 pages)
Published Online: December 20, 1999
Article history
Received:
April 13, 1999
Revised:
December 20, 1999
Citation
Verma, K., and Han, B. (December 20, 1999). "Warpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry." ASME. J. Electron. Packag. September 2000; 122(3): 227–232. https://doi.org/10.1115/1.1286315
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