Research Papers

Modeling of Moisture Transport Into an Electronic Enclosure Using the Resistor-Capacitor Approach

[+] Author and Article Information
Ž. Staliulionis

Process Modelling Group,
Department of Mechanical Engineering,
Technical University of Denmark,
Nils Koppels Allé,
Kgs. Lyngby 2800, Denmark
e-mail: zygsta@mek.dtu.dk

H. Conseil-Gudla, R. Ambat

Materials and Surface Engineering,
Department of Mechanical Engineering,
Technical University of Denmark,
Nils Koppels Allé,
Kgs. Lyngby 2800, Denmark

S. Mohanty, J. H. Hattel

Process Modelling Group,
Department of Mechanical Engineering,
Technical University of Denmark,
Nils Koppels Allé,
Kgs. Lyngby 2800, Denmark

M. Jabbari

Warwick Manufacturing Group (WMG),
University of Warwick,
Coventry CV4 7AL, UK

1Corresponding author.

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received April 30, 2017; final manuscript received March 16, 2018; published online May 10, 2018. Assoc. Editor: Amy Marconnet.

J. Electron. Packag 140(3), 031001 (May 10, 2018) (11 pages) Paper No: EP-17-1046; doi: 10.1115/1.4039790 History: Received April 30, 2017; Revised March 16, 2018

The aim of this paper is to model moisture ingress into a closed electronic enclosure under isothermal and non-isothermal conditions. As a consequence, an in-house code for moisture transport is developed using the Resistor-Capacitor (RC) method, which is efficient as regards computation time and resources. First, an in-house code is developed to model moisture transport through the enclosure walls driven by diffusion, which is based on the Fick's first and second law. Thus, the model couples a lumped analysis of moisture transport into the box interior with a modified one-dimensional (1D) analogy of Fick's second law for diffusion in the walls. Thereafter, under non-isothermal conditions, the moisture RC circuit is coupled with the same configuration of thermal RC circuit. The paper concerns the study of the impact of imperfections in the enclosure for the whole diffusion process. Moreover, a study of the impact of wall thickness, different diffusion coefficient, and initial conditions in the wall for the moisture transport is accomplished. Comparison of modeling and experimental results showed that the RC model is very applicable for simple and rough enclosure design. Furthermore, the experimental and modeling results indicate that the imperfections, with certain limits, do not have a significant effect on the moisture transport. The modeling of moisture transport under non-isothermal conditions shows that the internal moisture oscillations follow ambient temperature changes albeit with a delay. Although, moisture ingress is slightly dependent on ambient moisture oscillations; however, it is not so dominant until equilibrium is reached.

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Fig. 1

(a) Paths of moisture ingress into an enclosure (b) enclosure with the opening

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Fig. 2

(a) Electric circuit for the enclosure (b) a plate for the test case

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Fig. 3

Moisture ingress into electronic box through imperfections and wall

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Fig. 4

(a) Modeling of RH inside enclosure using PC material for wall (resistance value Rn,m is equal to 76923076 s/m3 and capacitance value Cn,m = 0.001 m3, n – is the number of element) and (b) RC circuit when the PC material for wall is replaced with the air (resistance value Rn,m is equal to 353848 s/m3 and capacitance value Cn,m = 0.217 m3)

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Fig. 5

Comparison of water vapor concentrations at elements node in the wall

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Fig. 6

(a) Typical enclosure used in experiments from Fibox, (b) experimental setup, and (c) experimental setup with opening [39]

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Fig. 7

Moisture response inside the enclosure dependent on wall thickness (L) when the diffusion coefficient is 4.51 × 10−12 m2/s

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Fig. 8

Interior moisture response dependent on size of the opening (wall thickness is 2.2 mm)

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Fig. 9

Experimental results when imperfections are analyzed

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Fig. 10

Experimental results when imperfections are analyzed and compared to the modeling

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Fig. 11

Interior moisture response for 1 mm opening and under different wall thickness

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Fig. 12

Interior moisture response for 3 mm opening under different wall thickness

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Fig. 13

Moisture response inside enclosure with 1 mm opening and 2.6 mm wall thickness

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Fig. 14

Moisture response inside enclosure with 3 mm opening and 2.6 mm wall thickness

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Fig. 15

Temperature dependent diffusion coefficient

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Fig. 16

Moisture response inside enclosure under different diffusion coefficient (wall thickness −2.6 mm)

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Fig. 17

Resistor-Capacitor circuit for modeling of temperature inside box through the wall

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Fig. 18

Ambient temperature and RH

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Fig. 20

Ambient temperature and RH (Copenhagen climatic data) [47]

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Fig. 21

Response of temperature

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Fig. 23

Comparison of wall discretization for moisture response



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