Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

[+] Author and Article Information
Hua Ye, Harry Efstathiadis, Pradeep Haldar

 State University of New York at Albany, College of Nanoscale Science and Engineering, 251 Fuller Road, Albany, NY 12203

J. Electron. Packag 128(3), 267-272 (Aug 15, 2005) (6 pages) doi:10.1115/1.2229226 History: Received June 13, 2005; Revised August 15, 2005

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

Copyright © 2006 by American Society of Mechanical Engineers
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Figure 1

Schematic of integrated power module

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Figure 2

Schematic of discrete power module

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Figure 3

Pool boiling curve for water at atmospheric pressure (after Collier (8))

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Figure 4

Heat flux curve versus heater temperature in liquid nitrogen pool boiling at 1atm (after Nguyen (19))

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Figure 5

(a) Liquid nitrogen pool boiling curve and (b) heat transfer coefficient used in the FE simulation

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Figure 6

Thermal conductivity versus temperature for silicon and packaging materials (from (23-27))

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Figure 7

Finite element meshes for (a) discrete module and (b) hybrid module

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Figure 8

Temperature distributions for (a) discrete and (b) hybrid modules at the current level of 25A

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Figure 9

(a) and (b) Junction temperature versus MOSFET power dissipation; (c) and (d) Junction temperature versus MOSFET steady-state current

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Figure 10

Temperature distribution across the center of discrete module at power dissipation level of 72W



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