Finite Element Modelling of Flip Chip Gold-Gold Thermocompression Bonding

[+] Author and Article Information
J. Puigcorbé, S. Marco, S. Leseduarte, M. Carmona

Sistemes d’Instrumentació i Comunicacions, Departament d’Electrònica, Universitat de Barcelona, Martı́ i Franquès 1, 08028-Barcelona, Spain

O. Vendier, C. Devron

Alcatel Space Industries, 26 Avenue JF Champollion BP1187, 31037-Tolouse, France

S. L. Delage, D. Floriot

Thomson-CSF, Domaine de Corbeville, 91404 Orsay, France

H. Blanck

UMS GmbH, 11 Wilhem Runge Strasse, D-89081-Ulm, Germany

J. Electron. Packag 125(4), 549-555 (Dec 15, 2003) (7 pages) doi:10.1115/1.1604157 History: Received November 01, 2002; Online December 15, 2003
Copyright © 2003 by ASME
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Photography of a rectangular electroplated gold bump onto GaAs substrate
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Evolution of temperature and pressure during the thermocompression. Detailed values in each case are detailed in Table 3.
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FEM model for the thermal bump
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Comparison between thermocompression results of 14 coupled node by node signal bumps and one equivalent bump with modified material properties. The agreement is quite good.
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Activation energy against temperature obtained from literature data. Horizontal bars refer to the temperature range from which the activation energy is calculated.
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Equivalent stress in MPa on the cross section thermal bump for simulated case 3
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Evolution of the thermal bump height against time for the three analyzed cases. Because of the different height between thermal and signal bumps, compression is produced first on the thermal bump (parabolic part) and then on the thermal and on the 14 signal bumps (almost linear part).



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