Packaging Induced Die Stresses—Effect of Chip Anisotropy and Time-Dependent Behavior of a Molding Compound

[+] Author and Article Information
W. D. van Driel, J. H. J. Janssen

Philips Semiconductors, ATO Innovation, P.O. Box 30008, 6534 AE Nijmegen, The Netherlands

G. Q. Zhang

Philips CFT, P.O. Box 218, 5600 MD Eindhoven, The Netherlands

D. G. Yang, L. J. Ernst

Delft University of Technology, P.O. Box 5033, 2600 GA Delft, The Netherlands

J. Electron. Packag 125(4), 520-526 (Dec 15, 2003) (7 pages) doi:10.1115/1.1604153 History: Received November 01, 2002; Online December 15, 2003
Copyright © 2003 by ASME
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Shear stress σxy [MPa] along path A-B at the die-compound interface during thermal cycling at −65°C
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Stress σxx [MPa] evolution in the compound for a point above the die during assembly
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Stress σxx [MPa] distribution in the die at −65°C for (a) linear compound and (b) viscoelastic compound behavior. Original and deformed shape (10×) are presented.
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Vertical displacement distribution [mm] of the die after temperature cycling at −65°C (a) isotropic (b) anisotropic die.
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Distribution of the stress components σxx [MPa] along the path from center to the edge of the die bottom (a) at wire bonding temperature (b) cooling down to −65°C from molding
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Time temperature profile for the complete manufacturing process
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Temperature-dependent Young’s modulus [MPa] and CTE [ppm/°C] for the glue
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2D axi-symmetric FE model for the QFP package
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3D FE model for the QFP package
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Master curves for the relaxation Young’s E(t), shear G(t), and bulk K(t) modulus [MPa]
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The master curve for the storage Young’s modulus fitted by the fractional series
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The results of a frequency sweep DMA on the molding compound
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(a) Bending and (b) torsion DMA test



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