Chemical-Mechanical Planarization of Low-k Polymers for Advanced IC Structures

[+] Author and Article Information
Christopher L. Borst, Dipto G. Thakurta, William N. Gill

Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590

Ronald J. Gutmann

Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590

J. Electron. Packag 124(4), 362-366 (Dec 12, 2002) (5 pages) doi:10.1115/1.1510138 History: Received May 01, 2002; Online December 12, 2002
Copyright © 2002 by ASME
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Grahic Jump Location
(a) BCB removal rates for all slurries are approximately the same for slurries with 0.05 μm Al2O3 particles with or without oxidizer. Removal rate increases greatly with 0.3 μm Al2O3 particles. (b) SiLK polymer removal rates show that both oxidizer and larger particles increase removal rate substantially.
Grahic Jump Location
(a) 1.5 μm×1.5 μm AFM scan after BCB CMP slurry 3, time=8 min, removal rate=10–15 nm/min; (b) 1.5 μm×1.5 μm AFM scan after SiLK CMP slurry 3, time=5 min, removal rate=100–110 nm/min
Grahic Jump Location
Removal rate of blanket SiLK versus KH phthalate concentration in model slurry 5
Grahic Jump Location
Copper and SiLK removal rates in model slurry 5 (no H2O2) and slurry 6 (H2O2 added).
Grahic Jump Location
(a) Lubrication, and (b) contact regimes of CMP
Grahic Jump Location
SiLK removal rate versus QCTT1010 concentration in slurry 5 (0.05 μm Al2O3,H2O2 oxidizer)



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