Temperature Distribution in Advanced Power Electronics Systems and the Effect of Phase Change Materials on Temperature Suppression During Power Pulses

[+] Author and Article Information
A. G. Evans

Princeton University, Materials Institute, Princeton, NJ 08540e-mail: anevans@princeton.edu

M. Y. He

Materials Department, University of California, Santa Barbara, CA 93106

J. W. Hutchinson

Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138

M. Shaw

Rockwell International, Thousand Oaks, CA 91360

J. Electron. Packag 123(3), 211-217 (Oct 01, 2000) (7 pages) doi:10.1115/1.1370376 History: Received November 29, 1999; Revised October 01, 2000
Copyright © 2001 by ASME
Your Session has timed out. Please sign back in to continue.


ASM Electronics Materials Handbook, 1986, Volume 1, Packaging, ASM International.
Taraseiskey, H., 1996, Power Hybrid Circuit Design and Manufacture, Marcel Dekker, Inc.
Sze, S. M., 1981, Physics of Semiconductor Devices, Wiley, NY.
McCluskey, F. P., 1997, High Temperature Electronics, CRC Press.
Tummala, R. R., and Rymaszewski, E. J., 1989, Microelectronics Packaging Handbook, Van Nostrand Reinhold.
NASA CR-61363, 1971, Phase-Change Materials Handbook.
NASA Technical Paper 1074, “A Design Handbook for Phase Change Thermal Control and Energy Storage Devices.”
Lu,  T. J., Evans,  A. G., and Hutchinson,  J. W., 1998, ASME J. Electron. Packag., 120, pp. 280–289.
Van Vodbold,  C., Sankaran,  V. A., and Hudgins,  J. L., 1997, IEEE Trans. On Power Electronics, 12, pp. 3.
Lu,  T. J., Stone,  H. A., and Ashby,  M. F., 1998, Acta Mater., 46, pp. 3619–3635.
Neugebauer, C. A., Yerman, A. F., Carlson, R. O., Burgess, J. F., Webster, H. F., and Glascock, J. H., 1986, The Packaging of Power Semiconductor Devices, Gordon and Breach, NY.
Lu,  T. J., 2000, Int. J. Heat Mass Transf., 43, pp. 2245–2256.
Laouadi,  A., and Lacroix,  M. 1999, Int. J. Heat Mass Transf., 42, pp. 275–286.
Muehlbauer,  J. C., and Sunderland,  J. E., 1965, Appl. Mech. Rev., 18, pp. 951–957.


Grahic Jump Location
(a) A schematic of the double-sided configuration: PCM1 is a metallic and PCM2 is an organic embedded within a Cu medium. The layers are attached by transient liquid phase bonding (TLP). (b) The thermal conductivities of the constituent materials.
Grahic Jump Location
The finite element mesh used in the calculations
Grahic Jump Location
Axial steady-state temperature distribution for a configuration subject to temperature boundary conditions applicable to water-cooling. Note the appreciable effect of the thermal conductivity of the AlN on the steady-state temperatures.
Grahic Jump Location
Radial temperature distributions in the SiC chip for both temperature and heat transfer boundary conditions
Grahic Jump Location
Axial steady-state temperature distributions for heat transfer boundary conditions appropriate to air cooling: (a) z, (b) R3/R1=40
Grahic Jump Location
A schematic showing the four phases subject to analysis
Grahic Jump Location
The magnitude of the gradient coefficient, χ, for a range of system variables
Grahic Jump Location
Transient temperatures, without PCM melting, calculated for typical pulses; (a) effect of heat transfer coefficient, (b) effect of chip thermal conductivity
Grahic Jump Location
The variation in the nondimensional temperature, Δτ (10), with time (absent PCM melting) for three different pulse magnitudes
Grahic Jump Location
(a) Transient temperatures upon PCM melting calculated for three PCM thicknesses. (b) The magnitude of the time coefficient, b, and its dependence on PCM thickness.



Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In