Warpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry

[+] Author and Article Information
K. Verma

Lucent Technologies, 9999 Hamilton Blvd., Breinigsville, PA 18031

B. Han

Department of Mechanical Engineering, University of Maryland, College Partk, MD 20742

J. Electron. Packag 122(3), 227-232 (Dec 20, 1999) (6 pages) doi:10.1115/1.1286315 History: Received April 13, 1999; Revised December 20, 1999
Copyright © 2000 by ASME
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Schematic diagram of Fizeau interferometry with a small inclined incidence
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(a) Optical path in Fizeau interferometry and (b) intensity distribution for the surfaces with various values of reflectivity
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(a) Mechanical and (b) optical configuration of the far infrared Fizeau interferometer for real-time measurement
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Infrared Fizeau fringes on a ground glass
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Cross-sectional view of the FC-PBGA module and assembly
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Warpage contours of FC-PBGA module, where contour interval is 5.31 μm per fringe order
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Warpage contours of FC-PBGA package assembly, where contour interval is 5.31 μm per fringe order
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W displacements of the silicon chip at various temperatures
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W displacements of the substrate of the module as a function of temperature
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Change in warpage from 140°C to −40°C along the vertical centerline
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(a) Warpage contours of TSOP, where contour interval is 5.31 μm per fringe order (b) W displacements along the horizontal centerline



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