New Reworkable High Temperature Low Modulus (in Excess of 400–500 °C) Adhesives for MCM-D Assembly

[+] Author and Article Information
Jiali Wu, Randy T. Pike

Packaging Research Center, Georgia Institute of Technology, Atlanta, GA 30332-0245

S. K. Sitaraman

School of Materials Science and Engineering, The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332

C. P. Wong

Packaging Research Center, Georgia Institute of Technology, Atlanta, GA 30332-0245e-mail: cp.wong@mse.gatech.edu

J. Electron. Packag 122(1), 55-60 (Aug 31, 1999) (6 pages) doi:10.1115/1.483124 History: Received June 01, 1999; Revised August 31, 1999
Copyright © 2000 by ASME
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Adhesion varies with A:B ratio with respect to different thermal processes
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Polydimethylsiloxane molecules spread on a substrate in a preferential orientation
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Optomicroscopic analysis on the morphology of HTLM adhesive changed with different thermal processes (a) after curing, (b) 400°C/60 min, and (c) 450°C/60 min
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Mechanism schematic of thermal metal stabilizer
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Schematic of sixteen 127 mm silicon wafer tiles adhesive-bonded to a 600×600 mm square glass pallet
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Schematic of two-dimensional FE model for silicon wafer on glass
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Two-dimensional schematic of silicon tile on glass substrate (quarter model)
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σxx in pallet versus adhesive modulus
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σxx in tile versus adhesive modulus
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Results of TGA on HTLM base resin series with a heating rate of 20°C/min
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Thermal stability comparison of the HTLM (A:B=1:1) adhesives with and without thermal stabilizer
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Viscosity varies with shear rate with respect to the A:B ratios at 25°C
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Film thickness varies with spin rate within the same coating time (t=30 s) (HTLM, A:B=1:1, 0.2 percent thermal stabilizer)
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Relation between adhesion strength and film thickness on HTLM (A:B=1:11, 0.2 percent thermal stabilizer) adhesive



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