Integrated Flow Analysis During Filling and Post-Filling Stage of Semiconductor Encapsulation

[+] Author and Article Information
Sejin Han, K. K. Wang

Sibley School of Mechanical and Aerospace Engineering, Cornell University, 169 Rhodes Hall, Ithaca, NY 14853

J. Electron. Packag 122(1), 20-27 (Aug 17, 1999) (8 pages) doi:10.1115/1.483127 History: Received April 05, 1999; Revised August 17, 1999
Copyright © 2000 by ASME
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Manzione, L. T., 1990, Plastic Packaging of Microelectronic Devices, Van Nostrand Reinhold, New York.
Turng,  L. S., and Wang,  V. W., 1993, “On the Simulation of Microelectronic Encapsulation with Epoxy Molding Compound,” J. Reinforced Plastics Composites, 12, pp. 506–519.
Han, S., and Wang, K. K., “Flow Analysis in a Chip Cavity During Semiconductor Encapsulation,” ASME J. Electron. Packag., accepted for publication.
Fariss, R. E., and Krueger, S. R., 1987, “Process Control Technology for Plastic Packaging of Microelectronic Devices,” SPE Tech. Pap., pp. 368–371.
Hieber,  C. A., and Shen,  S. F., 1980, “A Finite-Element/Finite-Difference Simulation of the Injection-Molding Filling Process,” J. Non-Newtonian Fluid Mech., 7, pp. 1–32.
Chiang,  H. H., Hieber,  C. A., and Wang,  K. K., 1991, “A Unified Simulation of the Filling and Postfilling Stages in Injection Molding,” Part I and II, Polym. Eng. Sci., 31, pp. 116–139.
Han,  S., Wang,  K. K., Hieber,  C. A., and Cohen,  C., 1997, “Characterization of the Rheological Properties of a Fast-Curing Epoxy Molding Compound,” J. Rheol., 42, pp. 177–195.
Herschel,  W. H., and Bulkley,  R., 1926, “Konsistenzmessungen von Gummi-Benzollosungen,” Kolloid-Z., 39, pp. 291–300.
Williams,  M. L., Landel,  R. F., and Ferry,  J. D., 1955, “The Temperature Dependence of Relaxation Mechanisms in Amorphous Polymers and Other Glass-Forming Liquids,” J. Am. Chem. Soc., 77, pp. 3701–3707.
Castro,  J. M., and Macosko,  C. W., 1980, “Kinetics and Rheology of Typical Polyurethane Reaction Injection Molding Systems,” SPE Tech. Pap., 26, pp. 434–438.
Kamal, M. R., and Ryan, M. E., 1987, Injection and Compression Molding Fundamentals, chpt. 4, A. I. Isayev, ed., Marcel Dekker, New York.
Lobo,  H., and Cohen,  C., 1988, “Measurement of Thermal Conductivity of Polymer Melts by the Line Source method,” SPE Tech. Pap., 34, pp. 609–611.
Kinlelaar, M., Muzumdar, S., Wang, B., Chiu, Y. Y., and Lee, L. J., 1994, “Dilatometry of Thermoset Resins in Reactive Processing,” SPE Tech. Pap., pp. 951–955.


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(a) Viscosity dependence on shear rate at 70°C and zero degree of cure and (b) viscosity versus temperature at zero degree of cure and shear rate of 300 s−1 for EMC (curve being a fit by Eq. (19)) (c) viscosity dependence on degree of cure at a shear rate of 300 s−1 at various temperatures
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Curing kinetics of the EMC measured with DSC under different scanning rates (symbols) and best fits based on Kamal’s equation (curves)
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Heat capacity of the EMC measured by DSC at different temperatures for uncured and cured samples
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(a) PvT measurement data using initially uncured EMC in heating mode and (b) PvT of the uncured phase obtained from (a). (Numbers in the legend represent the pressure in MPa.) (c) PvT measurement data using initially cured EMC in heating mode which correspond to the PvT of the cured phase.
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(a) Cavity geometry used in the experiment and the location of pressure transducer (unit in the drawing: mm) and (b) finite-element mesh used in the calculation
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Measured and calculated pressure traces with mold temperature of 153°C during filling stage (a) and post-filling stage (b)
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Measured and calculated pressure traces with mold temperature of 173°C during filling stage (a) and post-filling stage (b)
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Calculated (a) temperature and (b) degree-of-cure variation at z=0 (centerline) corresponding to location of pressure transducer with mold temperature of 173°C
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(a) Calculated centerline velocity (at the pressure transducer location) at the start of the packing stage at 153°C and (b) 173°C with packing pressure rise time of 0.1 and 1 s
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Calculated centerline velocity (at the pressure transducer location) during decompression of packing pressure (after applying packing pressure for 5 or 20 s) at 173°C with decompression time of 0.1 s (a) and 1 s (b)



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