An Interfacial Delamination Analysis for Multichip Module Thin Film Interconnects

[+] Author and Article Information
K. X. Hu, C. P. Yeh, X. S. Wu, K. Wyatt

Applied Simulation & Modeling Research, Motorola, Inc., 1303 E. Algonquin Road, Annex 2, Schaumburg, IL 60196

J. Electron. Packag 118(4), 206-213 (Dec 01, 1996) (8 pages) doi:10.1115/1.2792154 History: Received February 13, 1995; Revised November 22, 1995; Online December 05, 2007


Analysis of interfacial delamination for multichip module thin-film interconnects (MCM/TFI) is the primary objective of this paper. An interface crack model is integrated with finite-element analysis to allow for accurate numerical evaluation of the magnitude and phase angle of the complex stress intensity factor. Under the assumption of quasi-static delamination growth, the fate of an interfacial delamination after inception of propagation is determined. It is established that whether an interfacial delamination will continue to grow or become arrested depends on the functional behavior of the energy release rate and loading phase angle over the history of delamination growth. This functional behavior is numerically obtained for a typical MCM/TFI structure with delamination along die and via base, subjected to thermal loading condition. The effect of delamination interactions on the structural reliability is also investigated. It is observed that the delamination along via wall and polymer thin film can provide a benevolent mechanism to relieve thermal constraints, leading to via stress relaxation.

Copyright © 1996 by The American Society of Mechanical Engineers
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