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Research Papers

Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by Quantum Dots at Silica-on-Chip Structure

[+] Author and Article Information
Bin Xie, Xingjian Yu, Ruikang Wu

School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China

Haochen Liu, Xiao Wei Sun, Kai Wang

Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China

Xiaobing Luo

School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: luoxb@hust.edu.cn

1Corresponding author.

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received September 27, 2018; final manuscript received November 19, 2018; published online April 10, 2019. Assoc. Editor: Changqing Chen.

J. Electron. Packag 141(3), 031001 (Apr 10, 2019) (6 pages) Paper No: EP-18-1080; doi: 10.1115/1.4042981 History: Received September 27, 2018; Revised November 19, 2018

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI) while QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QDs@silica nanoparticles (QSNs)/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QSNs-based WLEDs present 16.7% higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5 °C, 21.3 °C, and 30.3 °C at driving current of 80 mA, 200 mA, and 300 mA, respectively.

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Figures

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Fig. 1

Schematic of the (a) QSNs-on-chip and (b) mixed type WLEDs. (a) QSNs-on-chip and (b) QSNs/phosphor mixed.

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Fig. 2

Schematic of the silica coating process

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Fig. 3

Schematic showing the heat generation measuring processes

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Fig. 4

Finite element models setup of (a) QSNs-on-chip and (b) mixed type WLEDs. The insets show the corresponding photographs of the WLEDs under daylight and ultraviolet (UV) light. (a) Type I: QSNs-on-chip and (b) type II: QSNs/phosphor mixed.

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Fig. 5

High-resolution transmission electron microscopy images of the CdSe/ZnS QDs (a) and the QSNs (b), insets show the corresponding photographs under daylight and UV light. (c) Absorption and PL spectra of the CdSe core QDs and CdSe/ZnS core–shell QDs.

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Fig. 6

(a) Electroluminescence spectra of the as-fabricated WLEDs under driving current of 20 mA, insets show their illuminated photographs. (b) Heat generation of each component under different driving current.

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Fig. 7

Simulated steady-state temperature fields of two WLEDs under driving current of 80 mA, 200 mA, and 300 mA. (a) Mixed at 80 mA, (b) mixed at 200 mA, (c) mixed at 300 mA, (d) QSNs on-chip at 80 mA, (e) QSNs on-chip at 200 mA, and (f) QSNs on-chip at 300 mA.

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Fig. 8

Temperature fields of two WLEDs under driving current of (a) 80 mA, (b) 200 mA, and (c) 300 mA

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