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Review Article

Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications

[+] Author and Article Information
Seungkyu Oh

Department of Mechanical Engineering, Texas Center for Superconductivity at University of Houston, and Advanced Manufacturing Institute, University of Houston, 4726 Calhoun Rd., Rm N207, Houston, Texas 77204-4006, USA
soh5@centeral.uh.edu

James Lundh

Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, 306 Reber Building, University Park, PA 16802, USA
jvl6065@psu.edu

Shahab Shervin

Department of Mechanical Engineering and Advanced Manufacturing Institute, University of Houston, 4726 Calhoun Rd., Rm N207, Houston, Texas 77204-4006, USA
sshervin@central.uh.edu

Bikramjit Chatterjee

Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, 306 Reber Building, University Park, PA 16802, USA
bpc5244@psu.edu

Dong Kyu Lee

Department of Printed Electronics Engineering, Sunchon National University, Suncheon-si, Jeollanam-do 57922, South Korea
donggyu@sunchon.ac.kr

Sukwon Choi

Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, 306 Reber Building, University Park, PA 16802, USA
sukwon.choi@psu.edu

Joon Seop Kwak

Department of Printed Electronics Engineering, Sunchon National University, Suncheon-si, Jeollanam-do 57922, South Korea
jskwak@sunchon.ac.kr

Jae-Hyun Ryou

Department of Mechanical Engineering, Materials Science and Engineering Program, Texas Center for Superconductivity at University of Houston, and Advanced Manufacturing Institute, University of Houston, 4726 Calhoun Rd., Rm N207, Houston, Texas 77204-4006, USA
jryou@uh.edu

1Corresponding author.

ASME doi:10.1115/1.4041813 History: Received March 21, 2018; Revised October 12, 2018

Abstract

GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics, (2) practical thermal management solutions for GaN power electronics, and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

Copyright (c) 2018 by ASME
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