A Wire-bondless Packaging Platform for Silicon Carbide Power Semiconductor Devices

[+] Author and Article Information
Liang Yin

General Electric, Global Research Center, Niskayuna, NY 12309

Chris Kapusta

General Electric, Global Research Center, Niskayuna, NY 12309

Arun V. Gowda

General Electric, Global Research Center, Niskayuna, NY 12309

Kaustubh Nagarkar

General Electric, Global Research Center, Niskayuna, NY 12309

1Corresponding author.

ASME doi:10.1115/1.4040499 History: Received October 22, 2017; Revised June 03, 2018


As silicon carbide (SiC) power semiconductor devices continue to mature for market adoption, innovative power electronics packaging designs and materials are needed to achieve the power density and efficiency that SiC devices are entitled to. Wire bonding loops is one of the major limiting factor in traditional module packaging methods for taking full benefits of SiC devices' superior electrical and thermal properties. Wire-bondless packaging methods have been demonstrated with low losses and to allow integration of gate drive circuit. In this paper, a wire-bondless packaging platform, referred to as Power Overlay Kilowatt (POL-kW), for SiC devices is presented. The packaging platform is intended for applications of motor drives and power conversion in automotive, aerospace and renewable industries. In this paper, POL-KW module's electrical and thermal performances were first summarized from previous experimental evaluations and numerical simulations. Compared with aluminum wire bonds, the utilization of polyimide-based Cu via interconnections resulted in much reduced parasitic resistance, capacitance and inductance, contributing to significantly lower switching loss and less voltage overshoot. The POL-kW module with integrated heat sinks showed low thermal resistance, which was further reduced by double-sided cooling. Recent results were presented on reliability evaluation, including high temperature storage, temperature cycling and power cycling.

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