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Technical Brief

A Study on Electrical Reliability Criterion on Through Silicon Via Packaging

[+] Author and Article Information
Ben-Je Lwo

Department of Mechanical and Aerospace Engineering,
Chung-Cheng Institute of Technology,
National Defense University,
Tao-Yuan 335, Taiwan
e-mail: lwob@ndu.edu.tw

Kuo-Hao Tseng

Department of Mechanical and Aerospace Engineering,
Chung-Cheng Institute of Technology,
National Defense University,
Tao-Yuan 335, Taiwan

Kun-Fu Tseng

Department of Multimedia and Game Science,
Asia-Pacific Institute of Creativity,
Miao-Li 351, Taiwan

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received August 16, 2015; final manuscript received February 25, 2016; published online March 23, 2016. Assoc. Editor: Seungbae Park.

J. Electron. Packag 138(2), 024501 (Mar 23, 2016) (5 pages) Paper No: EP-15-1073; doi: 10.1115/1.4032932 History: Received August 16, 2015; Revised February 25, 2016

Three-dimensional (3D) structure with through silicon via (TSV) technology is emerging as a key issue in microelectronic packaging industry, and electrical reliability has become one of the main technical subjects for the TSV designs. However, criteria used for TSV reliability tests have not been consistent in the literature, so that the criterion itself becomes a technical argument. To this end, this paper first performed several different reliability tests on the testing packaging with TSV chains, then statistically analyzed the experimental data with different failure criteria on resistance increasing, and finally constructed the Weibull failure curves with parameter extractions. After comparing the results, it is suggested that using different criteria may lead to the same failure mode on Weibull analyses, and 65% of failed devices are recommended as a suitable termination for reliability tests.

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Figures

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Fig. 1

The via chain structure [4]

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Fig. 2

Setup for the biasing tests

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Fig. 3

The experimental flowchart

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Fig. 4

Reliability test results for THCT

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Fig. 5

Extracted Weibull parameters from the results in Fig. 4

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Fig. 6

Reliability test results for BTATs

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Fig. 7

Extracted Weibull parameters from the results in Fig. 6

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Fig. 8

Reliability test results for BTCTs

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Fig. 9

Extracted Weibull parameters from the results in Fig. 8

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