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Research Papers

Double-Sided Transferred Carbon Nanotube Arrays for Improved Thermal Interface Materials

[+] Author and Article Information
Andrew J. McNamara, Yogendra Joshi, Zhuomin Zhang

George W. Woodruff School of
Mechanical Engineering,
Georgia Institute of Technology,
Atlanta, GA 30332

Kyoung-sik Moon, Ziyin Lin, Yagang Yao, Ching-Ping Wong

School of Materials Science and Engineering,
Georgia Institute of Technology,
Atlanta, GA 30332

Wei Lin

IBM,
Albany Nanotechnology Center,
Albany, NY 12203

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received December 4, 2014; final manuscript received April 22, 2015; published online July 14, 2015. Assoc. Editor: Gongnan Xie.

J. Electron. Packag 137(3), 031014 (Sep 01, 2015) (6 pages) Paper No: EP-14-1043; doi: 10.1115/1.4030802 History: Received December 04, 2014; Revised April 22, 2015; Online July 14, 2015

Recently, much attention has been given to reducing the thermal resistance attributed to thermal interface materials (TIMs) in electronic devices, which contribute significantly to the overall package thermal resistance. Thermal transport measured experimentally through several vertically aligned carbon nanotube (VACNT) array TIMs anchored to copper and silicon substrates is considered. A steady-state infrared (IR) microscopy experimental setup was designed and utilized to measure the cross-plane total thermal resistance of VACNT TIMs. Overall thermal resistance for the anchored arrays ranged from 4to50mm2KW-1. These values are comparable to the best current TIMs used for microelectronic packaging. Furthermore, thermal stability after prolonged exposure to a high-temperature environment and thermal cycling tests shows limited deterioration for an array anchored using a silver-loaded thermal conductive adhesive (TCA).

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References

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Figures

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Fig. 1

(a) SEM of TCA-bonded VACNT TIM and (b) zoomed-in SEM showing bonding between CNT and polymer

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Fig. 2

Metalized CNT used for In solder attachment

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Fig. 3

(a) Steady-state and IR microscope, QFI Infrascope II, and (b) steady-state IR test fixture

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Fig. 4

IR representative image showing interfacial TIM region and regions used to compute R"tot

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Fig. 5

R"tot measurement uncertainty for IR steady-state measurement at various applied sample heat fluxes

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Fig. 6

(a) Measured R"tot of TCA-based VACNT TIM as a function of array grown length and (b) R"tot for TCA-based VACNT TIM of varying total interfacial layer thicknesses

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Fig. 7

Thermal degradation of TCA-based VACNT TIM due to thermal cycling and aging tests

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Fig. 8

R"tot of solder-based attachment and R"tot after thermal cycling and aging tests

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