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Technical Brief

Thermal Resistance Analysis of High Power Light Emitting Diode Using Aluminum Nitride Thin Film-Coated Copper Substrates as Heat Sink

[+] Author and Article Information
S. Shanmugan

Nano Optoelectronics Research Laboratory,
School of Physics,
Universiti Sains Malaysia (USM),
Minden, Pulau Penang 11800, Malaysia
e-mail: shagan77in@yahoo.co.in

D. Mutharasu

Nano Optoelectronics Research Laboratory,
School of Physics,
Universiti Sains Malaysia (USM),
Minden, Pulau Penang 11800, Malaysia

1Corresponding author.

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received September 7, 2013; final manuscript received April 4, 2014; published online May 12, 2014. Assoc. Editor: Masaru Ishizuka.

J. Electron. Packag 136(3), 034502 (May 12, 2014) (6 pages) Paper No: EP-13-1099; doi: 10.1115/1.4027379 History: Received September 07, 2013; Revised April 04, 2014

AlN thin film was coated over Cu substrate (575 mm2) with 400 nm thickness using DC sputtering for thermal interface material (TIM) application. Aluminum Nitride (AlN)-coated Cu substrate (AlN/Cu) was used as a heat sink for 3-W green light emitting diode (LED). The thermal transient curve was recorded for given LED attached with bare Cu and AlN-coated Cu substrate at three different driving currents. LED attached on AlN/Cu showed the reduced raise in junction temperature (TJ) by 2.59 °C at 700 mA. The LED/TIM/AlN/Cu boundary condition was not supported to reduce the TJ. The total thermal resistance (Rth-tot) was reduced for AlN-coated Cu substrate at 350 mA. The thermal resistance between metal core printed circuit board and Cu substrate (Rth-b-hs) was also observed as low for AlN-coated Cu substrates compared with other boundary conditions measured at 700 mA. The observed results were supported for the use of AlN thin film as TIM in high power LEDs.

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Figures

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Fig. 1

Schematic diagram of four different configurations used

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Fig. 2

Testing LED in still air box (a) and the testing configuration of AlN thin film as thermal interface material in high power LED (b)

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Fig. 3

K-factor calibration curve for given LED

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Fig. 4

Transient cooling curve of 3-W green LED fixed on bare Cu and AlN thin film-coated Cu substrates with and without thermal paste measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

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Fig. 5

Variation of rise in junction temperature for different boundary condition measured at various driving currents: (a) 100 mA, (b) 350 mA, and (c) 700 mA

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Fig. 6

Cumulative structure function curve of 3-W green LED fixed on bare Cu and AlN thin film-coated Cu substrates with and without thermal paste measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

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Fig. 7

Variation of LED thermal resistances for different boundary condition measured at various driving currents: (a) 100 mA, (b) 350 mA, and (c) 700 mA

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Fig. 8

Variation of interface resistances for different boundary condition measured at various driving currents: (a) 100 mA, (b) 350 mA, and (c) 700 mA

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