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Research Papers

Effects of Voids in Sintered Silver Joint on Thermal and Optoelectronic Performances of High Power Laser Diode

[+] Author and Article Information
Yi Yan

Department of Materials
Science and Engineering,
Virginia Tech,
Blacksburg, VA 24061

Youliang Guan

Department of Engineering
Science and Mechanics,
Virginia Tech,
Blacksburg, VA 24061

Xu Chen

School of Chemical
Engineering and Technology,
Tianjin University,
Tianjin 300072, China
e-mail: xchen@tju.edu.cn

Guo-Quan Lu

Department of Materials
Science and Engineering,
Virginia Tech,
Blacksburg, VA 24061
Tianjin Key Laboratory of
Advanced Joining Technology,
School of Materials Science and Engineering,
Tianjin University,
Tianjin 300072, China

1Corresponding author.

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received April 19, 2013; final manuscript received July 11, 2013; published online September 4, 2013. Assoc. Editor: Shidong Li.

J. Electron. Packag 135(4), 041003 (Sep 04, 2013) (6 pages) Paper No: EP-13-1030; doi: 10.1115/1.4025247 History: Received April 19, 2013; Revised July 11, 2013

The thermal and the optoelectronic performance of high power gallium arsenide (GaAs) laser diode die-attached with sintered silver joint were investigated. The thermal and mechanical characteristics of the Laser bar packaging were simulated by finite element analysis (FEA). On the basis of prior experimental observations, voids in the bonding layer were intentionally introduced in the FEA model to examine their effect on the laser diode operating in the continuous-wave (CW) mode under different drive currents. The simulation results indicate that the quality of the bonding layer is very important to the heat dissipation capability of the packaging. Any void in the die-attach material would become a hotspot and thus deteriorate the optoelectronic performance of the laser diode. In addition, because of the coefficient of thermal expansion (CTE) mismatch between the laser bar and the copper heat sink, the interfacial thermomechanical stress will cause a noticeable curvature of the laser diode and a blueshift in the wavelength.

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References

Figures

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Fig. 1

60 W 808 nm CS-Mount laser diode die-bonded with nanosilver paste

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Fig. 2

Spectra of 60 W 808 nm CS-Mount laser diodes die-attached with sintered silver joint under different drive currents

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Fig. 3

Scanning acoustic microscopy image of 60 W 808 nm CS-Mount laser diodes die-bonded with nanosilver paste

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Fig. 4

Near-field linearity image of 60 W 808 nm CS-Mount laser diodes die-bonded with nanosilver paste at drive current of 20 A

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Fig. 5

Cross-sectional view of a laser bar of 60 W 808 nm CS-Mount laser diodes die-attached with sintered silver joint

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Fig. 6

Simplified structure of laser bar for FEA model; GaAs: gallium arsenide

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Fig. 7

FEA model with distribution voids in silver joint

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Fig. 8

Model mesh of conduction-cooled high-power laser diodes die-bonded with nanosilver paste

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Fig. 9

Temperature distributions across laser bar of 60 W 808 nm CS-Mount conduction-cooled high-power laser diodes die-bonded with nanosilver paste and working in the CW mode under different drive currents: (a) without voids in the silver joint and (b) with voids in the silver joint (all units in  °C)

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Fig. 10

Relationships between drive current and simulated maximum temperature of nanosilver-paste-packaged 60 W 808 nm CS-Mount laser diodes with and without voids in silver joint

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Fig. 11

Simulated displacements in Z-direction of laser bar under different drive currents with and without voids in silver joint

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Fig. 12

Simulated thermal stress distribution across laser bar under different drive currents: (a) without voids in silver joint and (b) with voids in silver joint (all units in MPa)

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Fig. 13

Relationship between drive current and centroid wavelength of nanosilver-paste-packaged 60 W 808 nm CS-Mount laser diodes with voids in silver joint

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