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Research Papers

Temperature-Dependent Electrical Characteristics of Ag Schottky Contacts to Differently Grown O-Polar Bulk ZnO

[+] Author and Article Information
Hogyoung Kim

Department of Optometry,
Seoul National University of Science
and Technology,
Seoul 139-743, Korea

Yunae Cho

Department of Physics,
Ewha Womans University,
Seoul 120-750, Korea

Dong-Wook Kim

Department of Physics,
Ewha Womans University,
Seoul 120-750, Korea;
Department of Chemistry and Nano Science,
Ewha Womans University,
Seoul 120-750, Korea
e-mail: dwkim@ewha.ac.kr

1Corresponding author.

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the Journal of Electronic Packaging. Manuscript received February 4, 2012; final manuscript received December 25, 2012; published online February 26, 2013. Assoc. Editor: Kyoung-sik Moon.

J. Electron. Packag 135(1), 011010 (Feb 26, 2013) (5 pages) Paper No: EP-12-1015; doi: 10.1115/1.4023404 History: Received February 04, 2012; Revised December 25, 2012

The temperature-dependent electrical properties of Ag Schottky contacts to differently grown O-polar bulk ZnO single crystals were comparatively investigated in the temperature range of 100–300 K. Schottky contact to hydrothermal ZnO produced the higher barrier heights (lower ideality factors) than that of pressurized melt-grown ZnO. The modified Richardson plots for two samples produced the larger Richardson constant compared to the theoretical value of 32 A cm−2 K−2 for n-type ZnO, indicating that the inhomogeneous barrier height with the thermionic emission (TE) model could not explain the current transport. The conductive accumulation layers on the ZnO surfaces might not be removed effectively for two samples, which degraded the rectifying characteristics. The different electron transport characteristics between hydrothermal and pressurized melt-grown ZnO could be explained by the different degree of Ag-O formation at the interface.

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Copyright © 2013 by ASME
Topics: Temperature , Crystals
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Figures

Grahic Jump Location
Fig. 1

(a) and (b) room-temperature I–V characteristics measured in both air and vacuum condition

Grahic Jump Location
Fig. 2

Semilogarithmic I–V characteristics for the Ag Schottky contacts to (a) HT ZnO and (b) PM ZnO in the temperature range of 100–300 K. The measurements were done in vacuum.

Grahic Jump Location
Fig. 3

(a) Effective barrier height and (b) ideality factor as a function of temperature, estimated from the results in Fig. 2

Grahic Jump Location
Fig. 4

Series resistance as a function of temperature

Grahic Jump Location
Fig. 5

(a) and (b) Effective barrier height versus 1/2kBT plot and (c) and (d) modified Richardson plot of ln(I0/T2) – q2σ2/2kB2T2 versus 1/kBT with a double Gaussian distribution of barrier heights for both samples

Grahic Jump Location
Fig. 6

ln(I) versus V plots at small forward bias voltages for the different temperatures

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