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Research Papers

Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste

[+] Author and Article Information
Xu Chen

School of Chemical Engineering and Technology,
Tianjin University,
Tianjin, 300072, P.R. China
e-mail: xchen@tju.edu.cn

Xingsheng Liu

State Key Laboratory of Transient Optics and Photonics,
Xi'an Institute of Optics and Precision Mechanics,
Chinese Academy of Sciences,
Xi'an, Shaanxi, 710119, P.R. China;
Xi'an Focuslight Technologies Co., Ltd.,
Xi'an, Shanxi, 710119, P.R. China

Yunhui Mei

Tianjin Key Laboratory of Advanced Joining Technology,
School of Materials Science and Engineering,
Tianjin University,
Tianjin, 710119, P.R. China

Guo-Quan Lu

Tianjin Key Laboratory of Advanced Joining Technology,
School of Materials Science and Engineering,
Tianjin University,
Tianjin, 710119, P.R. China;
Department of Materials Science and Engineering,
Virginia Tech, Blacksburg, VA 24061

1Corresponding author.

Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the Journal of Electronic Packaging. Manuscript received February 8, 2012; final manuscript received May 28, 2012; published online August 29, 2012. Assoc. Editor: Amy Fleischer.

J. Electron. Packag 134(4), 041003 (Aug 29, 2012) (7 pages) doi:10.1115/1.4007271 History: Received February 08, 2012; Revised May 28, 2012

Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.

Copyright © 2012 by ASME
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Figures

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Fig. 1

Structure of 60 W 808 nm CS-Mount laser diodes

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Fig. 2

Preparation process of 60 W 808 nm CS-Mount laser diodes

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Fig. 3

Low temperature sintering profile for nanosilver paste

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Fig. 4

60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 5

Detailed view of solder layer of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 6

LIV and spectrum testing of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste operating in continuous wave mode: (a) LIV and (b) spectrum

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Fig. 7

Near field image of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 8

Far field characteristic test results of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste: (a) fast axis and (b) slow axis

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Fig. 9

Near field linearity image of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 10

Spatial spectral test result of the 60 W 808 nm CS-Mount laser diode packaged with nanosilver paste

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Fig. 11

Variation of wavelength with heat power of laser diodes die-bonded with nanosilver paste

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Fig. 12

Thermal impedance of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 13

Fracture section of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste after die shear test

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Fig. 14

Scanning acoustic microscopy image of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 15

Thermal rollover test result of 60 W 808 nm CS-Mount laser diodes packaged with nanosilver paste

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Fig. 16

Modeled structure of conduction-cooled high power laser diodes packaged with nanosilver paste

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Fig. 17

FEA mesh of conduction-cooled high power laser diodes packaged with nanosilver paste

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Fig. 18

Temperature distribution for the 60 W 808 nm CS-Mount conduction-cooled high power laser diodes packaged with nanosilver paste working under continuous wave mode

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Fig. 19

Temperature distribution of die-attached material layer of 60 W 808 nm CS-Mount conduction-cooled high power laser diodes packaged with nanosilver paste working in continuous wave mode

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