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Research Papers

Reliability Evaluation on Deterioration of Power Device Using Coupled Electrical-Thermal-Mechanical Analysis

[+] Author and Article Information
Takashi Anzawa, Qiang Yu, Masaki Shiratori

Department of Mechanical Engineering and Materials Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

Masanori Yamagiwa

Department of Mechanical Engineering and Materials Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan; Electric Propulsion Laboratory, Nissan Research Center, Nissan Motor Co., Ltd., 1-Morinosatoaoyama, Atsugi-shi, Kanagawa 243-0123, Japan

Tadahiro Shibutani

Department of Safety Management, Yokohama National University, 79-7 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

J. Electron. Packag 132(3), 031012 (Sep 30, 2010) (6 pages) doi:10.1115/1.4002451 History: Received November 29, 2009; Revised August 08, 2010; Published September 30, 2010; Online September 30, 2010

This paper presents a simulation method to evaluate the thermal fatigue life of a power module. A coupled electrical-thermal analysis was performed to obtain the nonuniform temperature distribution of electric current. Then, a thermomechanical analysis was carried out based on the temperature distribution from the electrical-thermal analysis. Since crack propagation can change the route of heat transfer, a crack path simulation technique was used to investigate the fracture behavior of the power module. The crack initiates in the solder joint below the Al bonding wire of the insulated gate bipolar transistor module and propagates by increasing the diameter. The effect of the bonding type on power cycling fatigue life is also discussed. The fracture process was found to depend on the type of bonding. Lead frame bonding was found to be more effective than wire bonding.

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Copyright © 2010 by American Society of Mechanical Engineers
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References

Figures

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Figure 1

Analysis flow using FEM

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Figure 2

Model of IGBT power module (unit: mm)

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Figure 3

Boundary conditions for thermal-mechanical analysis.

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Figure 4

Mechanism of double elements: α: normal elements with structural and thermal properties; β: elements with only thermal conductivity in the crack area. (a) Before crack initiates. (b) After crack initiates.

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Figure 5

Results of coupled electrical-thermal analysis. (a) Contour map of the temperatures in the power device. (b) Contour map of the temperatures in the solder joint.

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Figure 6

Results of coupled thermal-mechanical analysis. (a) Contour map of creep strain in the solder joint. (b) Progression of temperature and strain.

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Figure 7

Crack propagation in the solder joint due to power cycling. (a) FEA results. (b) An example of solder joint failure below the wire bonding.

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Figure 8

Comparison of temperature profiles under crack propagation.

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Figure 9

Interconnection model. (a) Three-wire bonding. (b) Four-wire bonding. (c) Five-wire bonding. (d) Lead frame.

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Figure 10

Results of temperature distribution of the solder joint. (a) Three-wire bonding. (b) Four-wire bonding. (c) Five-wire bonding. (d) Lead frame.

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Figure 11

Results of maximum temperature of the Si chip; LF: lead frame.

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Figure 12

Crack propagation of wire bonding and lead frame. (a) Four-wire bonding. (b) Five-wire bonding. (c) Lead frame.

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Figure 13

Temperature profile in crack propagation; LF: lead frame

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