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Research Papers

Integration of Ta–N Thin Film Resistors on Anodic Alumina MCM-D Substrate

[+] Author and Article Information
Dapeng Zhu, Xiaoqin Lin, Le Luo

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

J. Electron. Packag 131(1), 011006 (Feb 12, 2009) (4 pages) doi:10.1115/1.3068305 History: Received December 18, 2007; Revised June 16, 2008; Published February 12, 2009

The aim of this work is to evaluate the changes in microstructures and electrical properties of a tantalum nitride (Ta–N) thin film integrated on an aluminum anodization multichip module deposited (MCM-D) substrate. A Ta–N resistor with a thickness of 100 nm was integrated at the bottom layer of the MCM-D substrate using rf reactive sputtering. Effects of aluminum anodization process on the Ta–N thin film resistor were studied. The results show that the oxide bulges composed of Ta2O5 and Ta–O–N are formed at the Ta–N film surface due to the effect of the upper layer of porous anodic alumina. The resistivity and the temperature coefficient of resistance of the Ta–N resistor remain unchanged. The integrated resistor is more stable owing to the protection of the oxide bulges.

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Copyright © 2009 by American Society of Mechanical Engineers
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Figure 1

The fabrication process of Ta–N resistor integrated in the anodic alumina substrate: (a) Ta–N film sputtering and etching, (b) aluminum deposition and photoresist patterning, (c) aluminum anodization process, and (d) Ta–N resistor integrated on MCM-D substrate

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Figure 2

Scanning electron micrographs of Ta–N integrated resistor: (a) at the vicinity of the electrode, (b) magnification micrograph of (a), (c) interface structure of Al2O3/Ta–N, and (d) the cross-section micrograph

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Figure 3

AES analysis of the oxide bulges on the Ta–N resistor surface: (a) AES energy spectra as a function of sputter depth and (b) AES depth profiles of the main elements in the oxide bulges

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Figure 4

XPS peak depth profile of Ta–N resistor: (a) Ta 4f, (b) Al 2p, (c) N 1s, and (d) O 1s

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