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TECHNICAL PAPERS

Parametric and Optimal Design in Electronic Packaging Using DSC: Computational, Geometrical, and Material Aspects

[+] Author and Article Information
Russell Whitenack

 Boeing Phantom Works, Structures Technology, Analysis Group, P.O. Box 3999 MC 45-97, Seattle, WA 98108

Chandra Desai

Department of Civil Engineering and Engineering Mechanics, The University of Arizona, Tucson, AZ 85721

Mostafa Rassaian

 Boeing Phantom Works, Structures Technology, Analysis Group, P.O. Box 3999 MC 45-97, Seattle, WA 98108

J. Electron. Packag 129(3), 356-365 (Nov 13, 2006) (10 pages) doi:10.1115/1.2753981 History: Received September 05, 2006; Revised November 13, 2006

The disturbed state concept (DSC) with the hierarchical single surface (HISS) plasticity model have been proposed and validated previously for a wide range of problems in electronic packaging. In this paper, detailed analyses are performed with the DSC∕HISS model to study the effect of various factors, such as computational and geometrical aspects and material parameters, on the failure life of chip substrate systems. The results and the methodology can be used for parametric analyses and optimal design of problems in electronic packaging.

Copyright © 2007 by American Society of Mechanical Engineers
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References

Figures

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Figure 1

Photomicrograph and dimensions for solder ball in 144 I∕O PBGA: (a) photomicrograph (Boeing 2001) and (b) dimensions

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Figure 2

Temperature versus cycle number, 144 I∕O PBGA analyses

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Figure 3

Test results for 20 144 I∕O PBGA devices

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Figure 4

Relative nodal displacements with temperature, 144 I∕O PBGA

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Figure 5

Schematic locations of Dm1, Dm2, and Dc

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Figure 6

Disturbance counters, 144 I∕O PBGA

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Figure 7

Volume fraction versus cycle number, 144 I∕O PBGA

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Figure 8

Schematic of relationship between ξD and N

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Figure 9

Relationship between Δln(N), Δln(ξD(N)), and b¯

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Figure 10

Simple mesh with four elements and 16 Gauss points for hypothetical example

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Figure 11

Predicted contours of disturbance for different reference cycles Nr at N=4000cycles

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Figure 17

Effect of E and ν on cycle to failure Nf

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Figure 18

Variation of Nf with γ

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Figure 19

Variation of Nf with a1 and η1

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Figure 20

Variation of Nf with A and Z

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Figure 15

Connection with midheight diameter of d=0.0

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Figure 14

Dimensions and ratios for 81 connection sizes and shapes; all connections have a dimension of b=0.46mm at the top and bottom surfaces. Dimensions of h and d are in mm; ratios h∕b and d∕b are dimensionless

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Figure 12

Comparison of full and accelerated analyses at selected cycles: (a) N=1500cycles, (b) N=2000cycles, (c) N=3000cycles, and (d) N=4000cycles

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Figure 16

Predicted number of cycles to failure versus characteristic shape and size

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