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RESEARCH PAPERS

Effect of Test Conditions on Electromigration Reliability of SnAgCu Flip-Chip Solder Interconnects

[+] Author and Article Information
Yi-Shao Lai1

Stress-Reliability Lab, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Road, Nantze Export Processing Zone, 811 Nantze, Kaohsiung, Taiwanyishao_lai@aseglobal.com

Chiu-Wen Lee, Chin-Li Kao

Stress-Reliability Lab, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Road, Nantze Export Processing Zone, 811 Nantze, Kaohsiung, Taiwan

1

Corresponding author.

J. Electron. Packag 129(1), 56-62 (May 19, 2006) (7 pages) doi:10.1115/1.2429710 History: Received November 01, 2005; Revised May 19, 2006

The high-temperature operation life test (HTOL) was conducted in this paper to study electromigration phenomena of solder interconnects in a flip-chip package assembly. We examined the fatigue reliability and morphological patterns of three solder compositions: Sn4Ag0.5Cu, Sn3.5Ag1Cu, and Sn3Ag1.5Cu, subjected to two test conditions consisting of different average current densities and ambient temperatures (5kAcm2 at 150°C and 20kAcm2 at 30°C). It is interesting to realize that as the Cu weight content of the solder composition increases, the fatigue life increases under 5kAcm2 at 150°C but decreases under 20kAcm2 at 30°C. Observed electromigration morphologies along with computed current density and temperature distributions on solder interconnects from the electrothermal coupling analysis were examined, correlated, and discussed.

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Copyright © 2007 by American Society of Mechanical Engineers
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Figures

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Figure 1

Layout of circuits and bumps on flip-chip test vehicle

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Figure 2

Configuration of electrified daisy chain

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Figure 3

Solid model for flip-chip test vehicle

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Figure 4

Schematic of solder interconnect

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Figure 5

Finite element mesh on solder interconnect

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Figure 6

Temperature distribution on V2+ bump under 20kA∕cm2 at 30°C (unit: °C)

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Figure 7

Sn–3.5Ag–1CuV1+ bump under 5kA∕cm2 at 150°C at 2888h

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Figure 8

Current density distribution on V1+ bump under 5kA∕cm2 at 150°C (unit: A∕m2)

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Figure 9

Sn–3.5Ag–1CuV3− bump under 5kA∕cm2 at 150°C at 774h

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Figure 10

Sn–3Ag–1.5CuV3− bump under 20kA∕cm2 at 30°C at 126h

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Figure 11

Sn–3.5Ag–1CuV3− bump under 20kA∕cm2 at 30°C at 62h

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Figure 12

Sn–4Ag–0.5CuV2−∕V3+ bump under 20kA∕cm2 at 30°C at 1687h

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Figure 13

Current density distribution on V2−∕V3+ bump under 20kA∕cm2 at 30°C (unit: A∕m2)

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Figure 14

Temperature distribution on V2−∕V3+ bump under 20kA∕cm2 at 30°C (unit: °C)

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