Rapid Thermal Characterization of the High Thermal Conductivity Film Layers by the Film-on Substrate Technique

[+] Author and Article Information
Sadegh M. Sadeghipour

 Mechanical Engineering Department, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA 15213

Mehdi Asheghi

 Mechanical Engineering Department, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA 15213masheghi@andrew.cmu.edu

J. Electron. Packag 128(2), 125-129 (Oct 11, 2005) (5 pages) doi:10.1115/1.2165213 History: Received January 14, 2005; Revised October 11, 2005

Lack of an efficient thermal management strategy and system can often lead to overall system failure in advanced microprocessors. This can be avoided by utilization of the high thermal conductivity materials, as heat spreader/sink, in compact packaging systems. The diamondlike dielectric materials, such as diamond, silicon nitride (Si3N4), aluminum nitride (AlN), silicon carbide (SiC), etc., are the likely choices. However, thermal characterization of such high thermal conductivity materials has proven to be challenging due to variations in the fabrication processes and, therefore, their microstructures as well as the practical difficulties in measuring small temperature gradients during the characterization. In this paper, we will report on a novel film on substrate technique that can be used conveniently for repeated measurements of the lateral thermal conductivity of the high thermal conductivity film layers, with thicknesses between 100 and 500μm.

Copyright © 2004 by IEEE
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Figure 1

Development of the new additives/processing techniques in recent years has resulted in substantial improvements in the thermal conductivities of the high thermal conductivity materials (1)

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Figure 2

Schematic of a test setup in which a sample is sandwiched between two identical substrates to avoid surface radiation (4)

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Figure 3

(a) Cross section of the actual experimental setup and (b) the simplified geometry used for one-dimensional heat conduction model in the high thermal conductivity layer (4)

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Figure 4

(a) The range of the applicability of the one-dimensional model (Eq. 4) is shown for do=100, 500μm and ko=1Wm−1K−1(4); (b) sensitivity curves for the temperature difference, as a function of the thermal conductivity and thickness of the sample, d, and the thickness of the low thermal conductivity film, do(4)

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Figure 5

Data from the electrical resistance thermometry and IR microscope measurements and the curve fits from a 2D ANSYS simulation based on thermal conductivity of film equal to 180Wm−1K−1




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