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RESEARCH PAPERS

A Micromechanics-Based Vapor Pressure Model in Electronic Packages

[+] Author and Article Information
X. J. Fan1

 Philips Research USA, 345 Scarborough Road, Briarcliff Manor, NY 10510xuejun.fan@ieee.orgDepartment of Mechanical Engineering,  Lamar University, Beaumont, TX 77710xuejun.fan@ieee.org Philips-CFT, P.O. Box 218, 5600 MD Eindhoven, The Netherlandsxuejun.fan@ieee.org Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlandsxuejun.fan@ieee.org

J. Zhou

 Philips Research USA, 345 Scarborough Road, Briarcliff Manor, NY 10510jenny.zhou@lamar.eduDepartment of Mechanical Engineering,  Lamar University, Beaumont, TX 77710jenny.zhou@lamar.edu Philips-CFT, P.O. Box 218, 5600 MD Eindhoven, The Netherlandsjenny.zhou@lamar.edu Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlandsjenny.zhou@lamar.edu

G. Q. Zhang

 Philips Research USA, 345 Scarborough Road, Briarcliff Manor, NY 10510g.q.zhang@philips.comDepartment of Mechanical Engineering,  Lamar University, Beaumont, TX 77710g.q.zhang@philips.com Philips-CFT, P.O. Box 218, 5600 MD Eindhoven, The Netherlandsg.q.zhang@philips.com Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlandsg.q.zhang@philips.com

L. J. Ernst

 Philips Research USA, 345 Scarborough Road, Briarcliff Manor, NY 10510l.j.ernst@wbmt.tudelft.nlDepartment of Mechanical Engineering,  Lamar University, Beaumont, TX 77710l.j.ernst@wbmt.tudelft.nl Philips-CFT, P.O. Box 218, 5600 MD Eindhoven, The Netherlandsl.j.ernst@wbmt.tudelft.nl Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlandsl.j.ernst@wbmt.tudelft.nl

1

Corresponding author current address: ATD Q&R, CH5-263, Intel Corporation, 5000 W. Chandler Blvd, Chandler, AZ 85226

J. Electron. Packag 127(3), 262-267 (Jun 26, 2004) (6 pages) doi:10.1115/1.1939027 History: Received June 22, 2004; Revised June 26, 2004

A complete vapor pressure model based on a micromechanics approach is developed in this paper. The model can be extended to calculate the initial vapor pressure as traction loading subjected to the interfaces after the delamination. The impact of the vapor pressure induced expanison on the material’s deformation is discussed.

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Copyright © 2005 by American Society of Mechanical Engineers
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Figures

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Figure 1

One-dimensional transient moisture-diffusion problem

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Figure 2

Local moisture concentration at x=h as function of time

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Figure 3

Dimensionless temperature at x=h as function of time

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Figure 5

Vapor pressure p at 220°C versus the current void volume fraction f by Eq. 35 for case 1, with f0=0.03, α=200ppm∕°C, T0=85°C, and p0=p0max=pg(85°C)=5.27×10−2MPa. It shows that the vapor pressure for case 1 is substantially low and has almost a negligible effect on the void growth.

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Figure 4

Three distinct cases for the vapor pressure evolution from the preconditioning temperature T0 to the current temperature T. In case 1, the moisture in the void is in the single vapor phase at T0, thus the vapor pressure at T follows the ideal gas law. In case 2, the moisture in the void is in the mixed liquid-vapor phase at temperature T (must be in the mixed liquid-vapor phase at T0, too), thus the vapor pressure maintains the saturated vapor pressure during the course of the temperature rise. Case 3 is an intermediate case between case 1 and case 2, where the moisture is in the mixed liquid-vapor phase at T0, but in the single vapor phase at T. The phase transition temperature T1 where the moisture is just fully vaporized should be determined first. Then the vapor pressure follows the ideal gas law from T⩾T1. The complete equations are given in 33,34,35.

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