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RESEARCH PAPER

Dynamic Reduced Electrothermal Model for Integrated Power Electronics Modules (IPEM)

[+] Author and Article Information
M. Hernández-Mora

Department of Mechanical Engineering, University of Puerto Rico-Mayagüez, Mayagüez, Puerto Rico, 00681-9045e-mail: madez_mora@me.uprm.edu

J. E. González

Department of Mechanical Engineering, Santa Clara University, Santa Clara, CA 95051e-mail: jgonzalezcruz@scu.edu

M. Vélez-Reyes, J. M. Ortiz-Rodrı́guez

Department of Electrical Engineering, University of Puerto Rico-Mayagüez, Mayagüez, Puerto Rico, 00681-9042

Y. Pang, E. Scott

Department of Mechanical Engineering, Virginia Polytechnic Institute and State University, 100S Randolph Hall, Blacksburg, VA 24061

J. Electron. Packag 126(4), 477-490 (Jan 24, 2005) (14 pages) doi:10.1115/1.1827264 History: Received May 03, 2004; Revised May 21, 2004; Online January 24, 2005
Copyright © 2004 by ASME
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References

Chen, J., Pang, Y. F., Boroyevich, D., Scott, E., and Thole, K., 2002, “Electrical and Thermal Layout Design Considerations for Integrated Power Electronics Modules,” Industry Applications Conference, 2002, Conference Record of 37th IAS Annual Meeting, Vol. 1, pp. 242–246.
Liang, Z., Lee, F. C., Wyk, V., and Lu, G. Q., 2001, “Embedded Power Technology for IPEMs Packaging Applications,” Proc. of 16th Annual IEEE, Applied Power Electronics Conference and Exposition, Vol. 2, pp. 1057–1061.
Hefner, A. R., and Blackburn, D. L., 1992, “Simulating the Dynamic Electro-Thermal Behavior of Power Electronic Circuits and Systems,” IEEE Workshop on Computers in Power Electronics, IEEE, New York, pp. 143–151.
Hefner,  A. R., and Blackburn,  D. L., 1994, “Thermal Component Models for Electrothermal Network Simulation,” IEEE Trans. Compon., Packag. Manuf. Technol., Part A, pp. 413–424 (see also IEEE Trans. Compon. Hybrids Manuf. Technol.).
Hefner,  A. R., 1994, “A Dynamic Electro-Thermal Model for the IGBT,” IEEE Trans. Appl. Ind., 30(2), pp. 394–405.
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Hsu,  J. T., and Vu-Quoc,  L., 1996, “A Rational Formulation of Thermal Circuit Models for Electrothermal Simulation—Part I: Finite Element Method,” IEEE Trans. Circuits Syst., I: Fundam. Theory Appl., 43(9), pp. 721–732.
Codecasa,  L., D’Amore,  D., and Maffezzoni,  P., 2002, “Modeling the Thermal Response of Semiconductor Devices Through Equivalent Electrical Networks,” IEEE Trans. Circuits Syst., I: Fundam. Theory Appl., 49(8), pp. 1187–1197.
Rodriguez, J., Parrilla, Z., Vélez-Reyes, M., Hefner, A., Berning, D., Reichl, J., and Lai, J., 2002, “Thermal Component Models for Electrothermal Analysis of Multichip Power Modules,” Industry Applications Conference, Conference Record of 37th IAS Annual Meeting, Vol. 1, pp. 234–241.
Hsu,  J. T., and Vu-Quoc,  L., 1996, “A Rational Formulation of Thermal Circuit Models for Electrothermal Simulation—Part II: Model Reduction Techniques,” IEEE Trans. Circuits Syst., 43(9), pp. 733–744.
Lee,  S. S., and Allstot,  D., 1993, “Electrothermal Simulation of Integrated Circuits,” IEEE J. Solid-State Circuits, 28(12), pp. 1283–1293.
Min,  Y. J., Palisoc,  A., and Lee,  C. C., 1990, “Transient Thermal Study of Semiconductor Devices,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 13(4), pp. 980–988.
Chen, J., Wu, Y., Boroyevich, D., and Bøhn, J., 2000, “Integrated Electrical and Thermal Modeling and Analysis of IPEMs,” Proc. of 7th Workshop on Computers in Power Electronics, COMPEL 2000, pp. 24–27.
Yovanovich, M. M., Culham, J. R., and Teertstra, P., 1997, “Calculating Interface Resistance,” http://www.electronics-cooling.com/Resources/EC_Articles/MAY97/article3.htm
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FLOTHERM User Manual Version 3.2, Flomerics, Ltd., Marlborough, MA (http://www.flomerics.com)
SABER Designer User Guide Release 5.1, Mountain View, CA (http://www.synopsis.com)

Figures

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Picture of Generation II IPEM
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(a) Geometrical model of Generation II IPEM; (b) Lumped decomposition of the Generation II IPEM
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Study of the model’s stability to the time step integration
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Radiation and convection effects on electrical performance of the Generation II IPEM model
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IPEM visualization plane from FLOTHERM
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LTCM versus FLOTHERM for lumped 1 with a power density of 5.574×103 W/m2
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LTCM versus FLOTHERM for lumped 2 with a power density of 1.101×105 W/m2
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LTCM versus FLOTHERM for lumped 3 with a power density of 1.888×105 W/m2
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Data acquisition system program used in the low-speed thermal response experiment
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Experimental test bed for the low-speed thermal response experiment: (a) schematic of experiment and (b) picture of actual setup
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Comparison between experimental and simulated values of the steady-state temperature against average power for: (a) left Si chip and (b) right Si chip
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Experiment data and the LTCM-heat sink model results for 1.58 W left chip power input
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Experiment data and the LTCM-heat sink model results for 3.7 W left chip power input
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Experiment data and the LTCM-heat sink model results for 6.98 W left chip power input
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Data acquisition system program used in the fast thermal response experiment
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Experimental testbed for the fast thermal response experiment: (a) schematic of experiment and (b) picture of actual setup
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Simulated schematic in SABER ™
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SABER and experimental comparison for the right semiconductor device using inputs of 2 Hz, 100 V, and 5 V
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SABER and experimental comparison for the right semiconductor device using inputs of 2 Hz, 200 V, and 2.5 V

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