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RESEARCH PAPER

Dynamic Reduced Electrothermal Model for Integrated Power Electronics Modules (IPEM)

[+] Author and Article Information
M. Hernández-Mora

Department of Mechanical Engineering, University of Puerto Rico-Mayagüez, Mayagüez, Puerto Rico, 00681-9045e-mail: madez_mora@me.uprm.edu

J. E. González

Department of Mechanical Engineering, Santa Clara University, Santa Clara, CA 95051e-mail: jgonzalezcruz@scu.edu

M. Vélez-Reyes, J. M. Ortiz-Rodrı́guez

Department of Electrical Engineering, University of Puerto Rico-Mayagüez, Mayagüez, Puerto Rico, 00681-9042

Y. Pang, E. Scott

Department of Mechanical Engineering, Virginia Polytechnic Institute and State University, 100S Randolph Hall, Blacksburg, VA 24061

J. Electron. Packag 126(4), 477-490 (Jan 24, 2005) (14 pages) doi:10.1115/1.1827264 History: Received May 03, 2004; Revised May 21, 2004; Online January 24, 2005
Copyright © 2004 by ASME
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References

Figures

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Picture of Generation II IPEM
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(a) Geometrical model of Generation II IPEM; (b) Lumped decomposition of the Generation II IPEM
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Study of the model’s stability to the time step integration
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Radiation and convection effects on electrical performance of the Generation II IPEM model
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IPEM visualization plane from FLOTHERM
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LTCM versus FLOTHERM for lumped 1 with a power density of 5.574×103 W/m2
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LTCM versus FLOTHERM for lumped 2 with a power density of 1.101×105 W/m2
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LTCM versus FLOTHERM for lumped 3 with a power density of 1.888×105 W/m2
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Data acquisition system program used in the low-speed thermal response experiment
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Experimental test bed for the low-speed thermal response experiment: (a) schematic of experiment and (b) picture of actual setup
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Comparison between experimental and simulated values of the steady-state temperature against average power for: (a) left Si chip and (b) right Si chip
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Experiment data and the LTCM-heat sink model results for 1.58 W left chip power input
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Experiment data and the LTCM-heat sink model results for 3.7 W left chip power input
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Experiment data and the LTCM-heat sink model results for 6.98 W left chip power input
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Data acquisition system program used in the fast thermal response experiment
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Experimental testbed for the fast thermal response experiment: (a) schematic of experiment and (b) picture of actual setup
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Simulated schematic in SABER ™
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SABER and experimental comparison for the right semiconductor device using inputs of 2 Hz, 100 V, and 5 V
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SABER and experimental comparison for the right semiconductor device using inputs of 2 Hz, 200 V, and 2.5 V

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