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RESEARCH PAPER

The Thermoelastic Analysis of Chip-Substrate System

[+] Author and Article Information
Linzhi Wu

School of Astronautics, Harbin Institute of Technology, Harbin 150001, P.R. China

J. Electron. Packag 126(3), 325-332 (Oct 06, 2004) (8 pages) doi:10.1115/1.1772413 History: Received May 01, 2003; Revised January 01, 2004; Online October 06, 2004
Copyright © 2004 by ASME
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References

Figures

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Chip-substrate structure. The dimension of the sample along the y-axis (perpendicular to the diagram) is assumed to be infinitely long.
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Heat conduction model of the chip-substrate structure
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The variation of stresses in the substrate at a depth of one unit from the interface along the x-axis. Solid line with Δ sign corresponds to stress component σ1z; solid line with ⊕ sign: σ1x; solid line with ○ sign: σ1xz.
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The variation of stresses in the substrate at a depth of one unit from the interface along the x-axis. Here, l0=10,h0=1,l1=50,h1=50. Solid line with Δ sign corresponds to σ1zz; solid line with ○ sign: σ1xz; solid line with ⊕ sign: σ1xx.
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The variation of normal stress σ1zz in the substrate at a depth 0.5 from the interface as a function of x. Δ: h1=10; ○: h1=20; ⊕: h1=50.
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The variation of shear stress σ1xz in the substrate at a depth 0.5 from the interface as a function of x. Δ: h1=10; ○: h1=20; ⊕: h1=50.
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The variation of normal stress σ1xx in the substrate as a function of x at a depth 0.5 from the interface. Δ: h1=10; ○: h1=20; ⊕: h1=50.
Grahic Jump Location
The variation of normal stress σ1zz in the substrate as a function of x at a depth 0.5 from the interface. h0=1,l1=50,h1=50. Δ: l0=10; ○: l0=15; ⊕: l0=20.
Grahic Jump Location
The variation of shear stress σ1xz in the substrate as a function of x at a depth 0.5 from the interface. h0=1,l1=50,h1=50. Δ: l0=10; ○: l0=15; ⊕: l0=20.
Grahic Jump Location
The variation of normal stress σ1xx in the substrate as a function of x at a depth 0.5 from the interface. h0=1,l1=50,h1=50. Δ: l0=10; ○: l0=15; ⊕: l0=20.

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