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TECHNICAL PAPERS

Controlled Fracture of Nonmetallic Thin Wafers Using a Laser Thermal Shock Method

[+] Author and Article Information
T. Elperin, G. Rudin

Department of Mechanical Engineering, The Pearlstone Center for Aeronautical Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel

J. Electron. Packag 126(1), 142-147 (Apr 30, 2004) (6 pages) doi:10.1115/1.1649245 History: Received April 01, 2003; Revised November 01, 2003; Online April 30, 2004
Copyright © 2004 by ASME
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References

Figures

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(a) Scheme of the method for formation of a surface microcrack: 1—laser beam, 2—air-water spray, 3—wafer (b) cracks in a wafer obtained by different laser methods: b1-open crack, b2-through crack, b3-surface microcrack (c) grid of surface microcracks in a wafer
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Different shapes of the laser beam cross-section:a-elliptic, b—rectangular, c—“splitted” beam
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Temperature T on the line of scanning of a laser beam (uniform power distribution-solid lines, “splitted” laser beam-dashed lines) vs. longitudinal coordinate y for different values of time t (curve 1—t=0.02 s, curves 2, 4—t=0.1 s, curves 3, 5—t=0.2 s)
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Temperature T on the line of scanning of a laser beam (Gaussian power distribution) vs. longitudinal coordinate y for different values of time t (curve 1—t=0.02 s, curve 2—t=0.1 s, curves 3, 4—t=0.2 s)
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Thermal stress σ at the edge of a wafer (location A-solid lines and location B—dashed lines) vs. time t for different values of the initial distance Δh between a laser beam and the edge of a wafer: Δh=3 mm (curves 1, 4), Δh=2 mm (curves 2, 5) and Δh=0 (curves 3, 6)
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Thermal stress σ at the edge of a wafer (location A-solid lines and location B-dashed lines) vs. time t for a uniform power distribution (curves 1, 2) and a “splitted” laser beam (curves 3, 4)

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