Effects of Wafer Cleaning and Annealing on Glass/Silicon Wafer Direct Bonding

[+] Author and Article Information
Hong-Seok Min, Young-Chang Joo

School of Materials Science & Engineering, Seoul National University, Seoul, Korea, 151-742

Oh-Sung Song

Dept. of Materials Science and Engineering, The University of Seoul, Seoul, Korea, 130-743

J. Electron. Packag 126(1), 120-123 (Apr 30, 2004) (4 pages) doi:10.1115/1.1649238 History: Received April 01, 2003; Revised September 01, 2003; Online April 30, 2004
Copyright © 2004 by ASME
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Grahic Jump Location
Optical images of room temperature bonding results. The wafers were prepared as follows: (a) both wafers were cleaned by RCA method (54.3 % bonding), (b) glass and Si wafers were cleaned using RCA and SPM, respectively (55.0 % bonding) (c) glass wafer was cleaned using RCA after SPM and Si wafer using SPM (84.2 % bonding), (d) both wafers were cleaned using RCA after SPM (95.8 % bonding).
Grahic Jump Location
Surface roughness of the glass wafers measured with AFM after various cleaning processes. The surface roughness of the glass wafer increased only after either of SPM or RCA treatment was used. Only the cleaning process of RCA after SPM produced the surface roughness similar to that of the glass wafer which underwent no cleaning treatment.
Grahic Jump Location
Bonding strength of glass/Si wafer pairs after annealing at various temperatures for 28 hours. The bonding strength increased as the temperature increased. However, at 450°C, debonding occurred.
Grahic Jump Location
Evolution of bonding strength with annealing time. The bonding strength increased with the annealing time up to 28 hours. The increasing rate of bonding strength was higher at 400°C than that at 300°C, but after annealing for 50 hours, the bonding strength decreased.
Grahic Jump Location
Depth profile of ion distribution measured using SIMS analysis in the silicon wafer surface after annealing at 400°C. “Sputtering time” corresponds to the depth from the wafer surface. Considering that sodium is sourced from the glass wafer, this result implies that ion drift has occurred from the glass wafer to the Si wafer.




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