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TECHNICAL PAPERS

Mechanical and Electrical Properties of Au-Al and Cu-Al Intermetallics Layer at Wire Bonding Interface

[+] Author and Article Information
Tan Chee Wei

School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan, Malaysia ON Semiconductor, SCG Ind. (M) Sdn. Bhd., Seremban, Malaysia

Abdul Razak Daud

School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan, Malaysia

J. Electron. Packag 125(4), 617-620 (Dec 15, 2003) (4 pages) doi:10.1115/1.1604809 History: Received February 01, 2003; Online December 15, 2003
Copyright © 2003 by ASME
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References

Khoury,  S. L., Burkhard,  D. J., Galloway,  D. P., and Scharr,  T. A., 1990, “A Comparison of Copper and Gold Wire Bonding on Integrated Circuit Devices,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 13, pp. 673–681.
Toyozawa,  K., Fujita,  K., Minamide,  S., and Maeda,  T., 1990, “Development of Copper Wire Bonding Application Technology,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 13, pp. 762–767.
Nguyen,  L. T., McDonald,  D., Danker,  A. R., and Ng,  Peter, 1995, “Optimization of Copper Wire Bonding on Al-Cu Metallization,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 18, pp. 423–429.
Onuki,  J., Koizumi,  M., Suzuki,  H., and Araki,  I., 1987, “Investigations on Reliability of Copper Ball Bonds to Aluminum Electrodes,” IEEE Trans. Compon., Hybrids, Manuf. Technol., CHMT-10, pp. 550–555.
Shimadzu Dynamic Ultra Micro Hardness Tester Model DUH-202 User’s Guide, 1997, Simadzu Corp., Kyoto, Japan.
Anguila, M. M. T., Felipe, R. C., Velarde, A. F., and Edpan, J. B., 1997, “Ball Bond Characterization: An Intensive Analysis on Ball Size and Shear Test Results and Applicability to Existing Standards,” Proc. IEEE/CPMT Electronic Packaging Technology Conf., pp. 46–51.
Clatterbaugh,  G. V., Weiner,  J. A., Charles,  H. K., and Romenesko,  B. M., 1984, “Gold-Aluminum Intermetallics: Ball Bond Shear Testing and Thin Film Reaction Couples,” IEEE Trans. Compon., Hybrids, Manuf. Technol., CHMT-7, pp. 349–356.
Gerling, W., 1984, “Electrical and Physical Characterization of Gold-Ball Bonds on Aluminum Layers,” IEEE Electronic Component Conf., New Orleans, pp. 13–20.
Murcko,  R. M., Susko,  R. A., and Lauffer,  J. M., 1991, “Resistance Drift in Aluminum to Gold Ultrasonic Wire Bonds,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 14, pp. 843–847.

Figures

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The voltage at Cu-Al interface contact versus aging time
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The shear force for thermally aged (150°C) Cu ball bonds on Al metallized silicon bond pads
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The shear force for thermally aged (150°C) Au ball bonds on Al metallized silicon bond pads
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The Cu-Al intermetallic thickness X at various aging time
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The Au-Al intermetallic thickness X at various aging time
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The cross section of aged Cu wire bonding system (a) at 500 h, (b) after 1000 h of aging time (×1000)
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The cross section of Au-Al intermetallic (a) at 0 h, (b) Al being consumed after 500 h in aging test because of solid-state diffusion (×1000)
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The spectrum of dynamic hardness versus depth of indentation for (a) Au-Al intermetallic and (b) Cu-Al intermetallic
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The triangular hardness of wire bonded materials that have undergone 500 h aging test

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