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TECHNICAL PAPERS

Mechanical and Electrical Properties of Au-Al and Cu-Al Intermetallics Layer at Wire Bonding Interface

[+] Author and Article Information
Tan Chee Wei

School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan, Malaysia ON Semiconductor, SCG Ind. (M) Sdn. Bhd., Seremban, Malaysia

Abdul Razak Daud

School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan, Malaysia

J. Electron. Packag 125(4), 617-620 (Dec 15, 2003) (4 pages) doi:10.1115/1.1604809 History: Received February 01, 2003; Online December 15, 2003
Copyright © 2003 by ASME
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References

Figures

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The triangular hardness of wire bonded materials that have undergone 500 h aging test
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The spectrum of dynamic hardness versus depth of indentation for (a) Au-Al intermetallic and (b) Cu-Al intermetallic
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The cross section of Au-Al intermetallic (a) at 0 h, (b) Al being consumed after 500 h in aging test because of solid-state diffusion (×1000)
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The cross section of aged Cu wire bonding system (a) at 500 h, (b) after 1000 h of aging time (×1000)
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The Au-Al intermetallic thickness X at various aging time
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The Cu-Al intermetallic thickness X at various aging time
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The shear force for thermally aged (150°C) Au ball bonds on Al metallized silicon bond pads
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The shear force for thermally aged (150°C) Cu ball bonds on Al metallized silicon bond pads
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The voltage at Cu-Al interface contact versus aging time

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