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TECHNICAL PAPERS

Impact of Die Attach Material and Substrate Design on RF GaAs Power Amplifier Devices Thermal Performance

[+] Author and Article Information
Victor Adrian Chiriac, Tien-Yu Tom Lee

Final Manufacturing Technology Center, Motorola Inc., 2100 E. Elliot Road, Mail Drop EL725, Tempe, AZ 85284

J. Electron. Packag 125(4), 589-596 (Dec 15, 2003) (8 pages) doi:10.1115/1.1604804 History: Received May 01, 2002; Revised February 01, 2003; Online December 15, 2003
Copyright © 2003 by ASME
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References

Adams, V. H., and Lee, T-Y, 2001, “An Assessment of the Impact of Interconnect Strategies on Thermal Performance of GaAs Power Amplifier IC Devices,” ASME IMECE 2001, November 15–17, New York.
Adams, V. H., Ramakrishna, K., Lee, T-Y., Hause, J. V., and Mahalingam, M., 1999, “Design-based Thermal Performance Evaluation of a GaAs MMIC Device in a Plastic Ball Grid Array,” Proceedings of InterPACK’99, EEP-Vol. 26-1, pp. 277–285.
Webb, P. W., 1997, “Thermal Design of Gallium Arsenide MESFETs for Microwave Power Amplifiers,” IEEE Proc.-Circuits Devices Syst., Vol. 144, pp. 45–50.
Nishihori,  K., Ishida,  K., Kitaura,  Y., and Uchitomi,  N., 1997, “Thermal Analysis of GaAs Power Monolithic Microwave IC’s Mounted with Epoxy Attachment,” IEEE Trans. Compon., Packag. Manuf. Technol., Part A, 20, pp. 220–224.
Lee, T.-Y., and Adams, V., 2000, “Is Thinning the Die Always Better Thermally?” Motorola Internal Report.
Fan,  M., Christou,  A., and Pecht,  M., 1992, “Two-dimensional Thermal Modeling of Power Monolithic Microwave Integrated Circuits (MMIC’s),” IEEE Trans. Electron Devices, 39, pp. 1075–1079.
Bonani, F., Ghione, G., Pirola, M., and Naldi, C. U., 1993, “A New, Efficient Approach to the Large-Scale Thermal Modeling of III-IV Devices and Integrated Circuits,” Proc. IEDM 1993, pp. 101–104.
Wright, J. L., Marks, B. W., and Decker, K. D., 1991, “Modeling of MMIC Devices for Determining MMIC Channel Temperature During Life Tests,” Proc. Seventh SEMI-THERM Symposium, pp. 131–139.
Reiner,  C. J., Smy,  T., Walkey,  D. J., Beggs,  B. C., and Surridge,  R., 2000, “A Simulation Study of IC Layout on Thermal Management of Die Attached GaAs ICs,” IEEE Trans. Compon., Packag. Manuf. Technol., Part A, 23, pp. 341–351.
Webb,  P. W., 1993, “Thermal Modeling of Power Gallium Arsenide Microwave Integrated Circuits,” IEEE Trans. Electron Devices, 40, pp. 867–877.
Chien, D., Lee, C., Rachlin, M., Peake, A., and Kole, T., 1996, “Thermal Analysis and Measurement of Plastic Packaged GaAs Devices,” Twelfth SEMI-THERM, pp. 89–96.
FLOTHERM® Version 3.1, 2001, Flomerics Ltd., Surrey, England.
Adams, V., Lee, T-Y., and Hause, J., 2000, “Thermal Evaluation of GaAs-Based RF Power Amplifier Packages for Handheld Portable Applications,” Proc. of the Manufacturing Engineering Division-2000 (MED-11), pp. 433–442.
Kreith, F., and Bohn, M. S., 1986, Principles of Heat Transfer, 4th edition, Harper & Row Publishers, New York.
CINDAS Material Property Database, 1997, Purdue University, West Lafayette, IN.

Figures

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Schematic of wirebonded GaAs IC configuration: (a) details of GaAs IC, and (b) overall system including die, overmold, and PCB
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PCB (printed circuit board) layout
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case A
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case B
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case C
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case D
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case E
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case F
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case G
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(a) (b) Temperature field in the top/bottom portion of the die attach layer—case H
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Maximum PA temperatures versus die attach thermal conductivity
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Temperature drop across die attach for all cases

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