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TECHNICAL PAPERS

Die Cracking at Solder (In60-Pb40) Joints on Brittle (GaAs) Chips: Fracture Correlation Using Critical Bimaterial Interface Corner Stress Intensities

[+] Author and Article Information
Bingzhi Su, Y. C. Lee, Martin L. Dunn

Department of Mechanical Engineering, University of Colorado at Boulder, Boulder, CO 80309

J. Electron. Packag 125(3), 369-377 (Sep 17, 2003) (9 pages) doi:10.1115/1.1602702 History: Received May 01, 2002; Online September 17, 2003
Copyright © 2003 by ASME
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References

Figures

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Schematics of (a) a representative flip-chip assembled component and (b) a closeup of a single solder bump on a chip with the relevant geometric variables
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Schematics showing (a) a closeup of the GaAs/solder interface corner; (b) the idealization of the GaAs/gold interface corner by straight edges; and (c) geometry of the general bimaterial interface corner showing coordinate axes
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Stress singularities as a function of the interface corner angle for the In60-Pb40 solder/GaAs bimaterial corner
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Optical micrograph showing a typical cracked GaAs chip (D,ΔT)=(635 μm,−95°C) after the solder bump is etched away
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Map of solder pad diameter (solder volume) versus temperature change. Filled symbols indicate combinations that cracked and open symbols represent uncracked combinations as determined experimentally. The solid line represents the application of the K1n=K1crn fracture initiation criterion K1crn=98 MPa μm0.41. The criterion predicts that combinations above the line will crack, while those below the line will not.
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Elastic stress distribution σθθ (θ=45 deg) in GaAs for the (D,ΔT)=(1016 μm,−85°C) sample. As indicated in the legend, full-field finite element calculations are shown along with combinations of the asymptotic terms in the solution: the K1n field, the K1n+K2n field, the K1n+K0n field, and the K1n+K2n+K0n field.
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Elastic finite element results for σθθ (θ=45 deg) in the GaAs versus distance from the interface corner for two extreme geometry/load pairs that failed: (D,ΔT)=(508 μm,−95°C) and (1016 μm, −75°C)
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Elastic-plastic finite element results for σθθ (θ=45 deg) in the GaAs versus distance from the interface corner for two extreme geometry/load pairs that failed: (D,ΔT)=(508 μm,−95°C) and (1016 μm, −75°C)

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