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TECHNICAL PAPERS

Analysis of Substrates for Single Emitter Laser Diodes

[+] Author and Article Information
Tapani M. Alander, Pekka A. Heino, Eero O. Ristolainen

Institute of Electronics, Tampere University of Technology, 33101 Tampere, Finland

J. Electron. Packag 125(3), 313-318 (Sep 17, 2003) (6 pages) doi:10.1115/1.1527657 History: Received December 04, 2001; Online September 17, 2003
Copyright © 2003 by ASME
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Figures

Grahic Jump Location
Model geometry and the element mesh
Grahic Jump Location
Principal stresses after joining process on different substrates with 250°C as the reference temperature
Grahic Jump Location
Principal stress difference between 250°C and 20°C stress-free reference temperature
Grahic Jump Location
Maximum operating temperatures of p (left) and n-side (right) down bonded lasers on different substrates
Grahic Jump Location
Principal stress difference of p-side down bonded laser diodes due to operation
Grahic Jump Location
Principal stress difference of n-side down bonded laser diodes due to operation
Grahic Jump Location
Principal stresses in GaAs due to different CTE-values of the AlN

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