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Calibrate Piezoresistive Stress Sensors Through the Assembled Structure

[+] Author and Article Information
Ben-Je Lwo

Department of Mechanical Engineering, Chung-Cheng Institute of Technology, National Defense University, Ta-Shi, Tao-Yuan, Taiwan, 335, R. O. C.e-mail: lwob@ccit.edu.tw

Shen-Yu Wu

Department of Weapon System Engineering, Chung-Cheng Institute of Technology, National Defense University, Ta-Shi, Tao-Yuan, Taiwan, 335, R. O. C.

J. Electron. Packag 125(2), 289-293 (Jun 10, 2003) (5 pages) doi:10.1115/1.1572904 History: Received April 30, 2002; Online June 10, 2003
Copyright © 2003 by ASME
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References

Zou,  Y., Suhling,  J. C., Johnson,  R. W., Jaeger,  R. C., and Mian,  A. K. N., 1999, “In-Situ Stress State Measurements During Chip-on-Board Assembly,” IEEE Trans. Electronic Packaging Manufacturing, 22, pp. 38–52.
Lwo,  B. J., Kao,  C. H., Chen,  T. S., and Chen,  Y. S., 2002, “On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging,” ASME J. Electron. Packag., 124(1), pp. 22–26.
Lwo,  B. J., Chen,  T. S., Kao,  C. H., and Lin,  Y. L., 2002, “In-Plane Packaging Stress Measurements Through Piezoresistive Sensors,” ASME J. Electron. Packag., 124(2), June, pp. 115–121.
Palaniappan,  P., Baldwin,  D. F., Selman,  P. J., Wu,  J., and Wang,  C. P., 1999, “Correlation of Flip Chip Underfill Process Parameters and Material Properties with In-Process Stress Generation,” IEEE Trans. Electronic Packaging Manufacturing, 22, pp. 53–62.
Lau, J. H., Thermal Stress and Strain in Microelectronics Packaging, Van Nostrand Reinhold Co., New York, 1993.
Long,  D., 1955, “Effect of Pressure on the Electrical Properties of Indium Antimonide,” Phys. Rev., 99, pp. 388–390.
Tufte,  O. N., and Stelzer,  E. L., 1963, “Piezoresistive Properties of Silicon Diffused Layers,” J. Appl. Phys., 34, pp. 313–318.
Tufte,  O. N., and Stelzer,  E. L., 1964, “Piezoresistive Properties od Heavily Doped n-Type Silicon,” Phys. Rev. A, 133A, pp. A1705–A1716.
Jaeger,  R. C., Suhling,  J. C., Carey,  M. T., and Johnson,  R. W., 1993, “Off-Axis Sensor Rosette for Measurement of the Piezoresistive Coefficients of Silicon,” IEEE Trans. Compon., Hybrids, Manuf. Technol., 16, pp. 925–930.
Jaeger, R. C., Suhling, J. C., Carey, M. T., and Johnson, R. W., 1993, “A Piezoresistive Sensor Chip for Measurement of Stress in Electronic Packaging,” Proc., IEEE Electronic Components and Technology Conference, pp. 686–692.
Suhling, J. C., Cordes, R. A., Kang, Y. L., and Jaeger, R. C., 1994, “Wafer-Level Calibration of Stress Sensing Test Chips,” Proc., 44th Electronic Components and Technology Conference, pp. 1058–1070.
Hau, W. L. W., Yuen, M. M. F., Yan, Z., and Chan, P. C. H., 2001, “A New Stress Chip Design for Electronic Packaging Applications,” Proc., Int. Symp. Electronic Materials Packaging, pp. 457–463.
Beaty, R. E., Suhling, J. C., Moody, C. A., Bittle, D. A., Johnson, R. W., Butler, R. D., and Jaeger, R. C., 1990, “Calibration Consideration for Piezoresistive-Based Stress Sensors,” Proc., 40th Electronic Component and Technology Conference, IEEE, pp. 797–806.
Lwo,  B. J., Chen,  Y. S., Chen,  T. S., Lee,  G. M., Kao,  C. H., Lin,  C. Y., and Tseng,  K. F., 2000, “Temperature Calibration on Piezoresistive Sensors,” J. Chung-Cheng Instit. Technology, 29(1), pp. 15–22. (In Chinese)

Figures

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Piezoresistive coefficients at different temperature
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Stress-resistance relation for a typical rosette
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Temperature-resistance relationship for typical resistors
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Top view of the assembled fixture
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Ideal representation (left) and actual 4PB fixture (right)
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A typical MQFP structure
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The configuration of the five-element rosette

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