0
TECHNICAL PAPERS

Chemical-Mechanical Planarization of Low-k Polymers for Advanced IC Structures

[+] Author and Article Information
Christopher L. Borst, Dipto G. Thakurta, William N. Gill

Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590

Ronald J. Gutmann

Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590

J. Electron. Packag 124(4), 362-366 (Dec 12, 2002) (5 pages) doi:10.1115/1.1510138 History: Received May 01, 2002; Online December 12, 2002
Copyright © 2002 by ASME
Your Session has timed out. Please sign back in to continue.

References

Küchenmeister, F., Stavreva, Z., Schubert, U., Richter, K., and Wenzel, C., 1998, Advanced Metallization Conf., Colorado Springs.
Towery,  D., and Fury,  M., 1998, J. Electron. Mater., 27(10), p. 1088.
Neirynck,  J., Yang,  G.-R., Murarka,  S., and Gutmann,  R., 1996, Thin Solid Films, 290–291, 447.
Yang,  G.-R., Zhao,  Y.-P., Neirynck,  J., Murarka,  S., Gutmann,  R., 1997, J. Electrochem. Soc., 144(9), 3249.
Cook,  L., 1990, J. Non-Cryst. Solids, 120, 152.
Farkas, J., Carpio, R., Bajaj, R., Galanakis, C., Jairath, R., Jones, B., Tzeng, S.-M., Proc. ULSI-X, 25 (1995).
Kallingal,  C., Duquette,  D., Murarka,  S., 1998, J. Electrochem. Soc., 145(6), 2074.
Steigerwald, J., Murarka, S., Duquette, D., Gutmann, R., Proc., ULSI-X, 173 (1995).
Borst,  C. L., Thakurta,  D. G., Gill,  W. N., and Gutmann,  R. J., 1999, J. Electrochem. Soc., 146(11), p. 4309.
Borst,  C. L., Thakurta,  D. G., Gutmann,  R. J., and Gill,  W. N., 2002, J. Electrochem. Soc., 149(2), G118.
Nguyen,  V., VanKranenburg,  H., and Woerlee,  P., 2000, Microelectron. Eng., 50, 403.
Nanz,  G., and Camilletti,  L. E., 1995, IEEE Trans. Semicond. Manuf., 8, p. 82.
Sundararajan,  S., Thakurta,  D. G., Schwendeman,  D. W., Murarka,  S. P., and Gill,  W. N., 1999, J. Electrochem. Soc., 146, 761.
Thakurta,  D. G., Borst,  C. L., Schwendeman,  D. W., Gutmann,  R. J., and Gill,  W. N., 2000, Thin Solid Films, 366(1–2), p. 181.
Runnels,  S. R., and Eyman,  L. M., 1994, J. Electrochem. Soc., 141, p. 1698.
Runnels,  S. R., 1994, J. Electrochem. Soc., 141, 1900.
Yu,  T.-K., Yu,  C.-C., and Orlowski,  M., 1993, IEDM Tech. Dig., 5, p. 865.
Bhushan,  M., Rouse,  R., and Lukens,  J. E., 1995, J. Electrochem. Soc., 142, 3845.
J. Waeterloos, B. Coenegrachts, A. Van Ammel, G. Beyer, R. A. Donaton, I. Vervoort, and K. Maex, Adv. Metal. Conf. Proc., (1999).
Price,  D. T., Gutmann,  R. J., and Murarka,  S. P., 1997, Thin Solid Films, 308–309, 523.
Gutmann, R. J., Borst, C. L., Lee, B.-C., Thakurta, D. G., Duquette D. J., and Gill, W. N., 18th VMIC Conf. Proc., Santa Clara, CA, 123 (2000).
Park, T., Tugbawa, T., and Boning, D., 5th CMP-MIC Conf. Proc., Santa Clara, CA, 196 (2000).
Borst, C. L., “Experiments and Mechanistic Models for the Chemical-Mechanical Polishing of Low Dielectrics Constant Polymers and Organosilicate Glasses,” Ph.D. thesis Rensselaer Polytechnic Institute, Dec. 2000.
Thakurta, D. G., “Slurry Flow, Mass Transport, Surface-Kinetics and Removal Rate Models for Chemical-Mechanical Planarization,” Ph.D. thesis, Rensselaer Polytechnic Institute, Jan. 2001.

Figures

Grahic Jump Location
SiLK removal rate versus QCTT1010 concentration in slurry 5 (0.05 μm Al2O3,H2O2 oxidizer)
Grahic Jump Location
(a) Lubrication, and (b) contact regimes of CMP
Grahic Jump Location
Copper and SiLK removal rates in model slurry 5 (no H2O2) and slurry 6 (H2O2 added).
Grahic Jump Location
Removal rate of blanket SiLK versus KH phthalate concentration in model slurry 5
Grahic Jump Location
(a) 1.5 μm×1.5 μm AFM scan after BCB CMP slurry 3, time=8 min, removal rate=10–15 nm/min; (b) 1.5 μm×1.5 μm AFM scan after SiLK CMP slurry 3, time=5 min, removal rate=100–110 nm/min
Grahic Jump Location
(a) BCB removal rates for all slurries are approximately the same for slurries with 0.05 μm Al2O3 particles with or without oxidizer. Removal rate increases greatly with 0.3 μm Al2O3 particles. (b) SiLK polymer removal rates show that both oxidizer and larger particles increase removal rate substantially.

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In