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TECHNICAL BRIEFS

Measurement of Thermal Deformation of Interconnect Layers Using SIEM

[+] Author and Article Information
Sheng Chang, Fu-Pen Chiang

State University of New York at Stony Brook, Department of Mechanical Engineering, Stony Brook, NY 11794-2300 e-mail: shchang@ic.sunysb.edu

Yifan Guo

Conexant Systems, Inc., 4311 Jamboree Road, E04-401, Newport Beach, CA 92660 e-mail: yifan.guo@conexant.com

J. Electron. Packag 124(3), 310-313 (Jul 26, 2002) (4 pages) doi:10.1115/1.1481367 History: Received May 31, 2001; Online July 26, 2002
Copyright © 2002 by ASME
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References

Figures

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Strip specimen and testing areas
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Schematic presentation of Cu-low k interconnect
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SEM picture of the interconnection layer
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SEM pictures of a C4 joint corner
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u and v displacement fields at 2000×, ΔT=261°C (contour interval=40 nm)
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u and v displacement fields at 4000×, ΔT=261°C (contour interval=20 nm)

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