0
TECHNICAL PAPERS

On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging

[+] Author and Article Information
Ben-Je Lwo

Department of Mechanical Engineering, Chung-Cheng Institute of Technology, National Defense University, Ta-Shi, Tao-Yuan, 335, Taiwan, R.O.C.e-mail: lwob@ccit.edu.tw

Ching-Hsing Kao

Department of Applied Physics, Chung-Cheng Institute of Technology, National Defense University, Ta-Shi, Tao-Yuan, Taiwan, 335, R.O.C.

Tung-Sheng Chen, Yao-Shing Chen

Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Ta-Shi, Tao-Yuan, Taiwan, 335, R.O.C.

J. Electron. Packag 124(1), 22-26 (Feb 21, 2000) (5 pages) doi:10.1115/1.1414134 History: Received February 21, 2000
Copyright © 2002 by ASME
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
Configuration of a typical four-resistor rosette
Grahic Jump Location
A typical MQFP structure
Grahic Jump Location
Ideal representation (left) and actual 4PB fixture (right)
Grahic Jump Location
σx due to process effect, measured by n-type sensors
Grahic Jump Location
σy due to process effect, measured by n-type sensors
Grahic Jump Location
σx due to process effect, measured by a typical p-type sensor
Grahic Jump Location
Stress differences due to process effect, measured by p-type sensors
Grahic Jump Location
σx due to power generated in a chip, measured by n-type sensors
Grahic Jump Location
σy due to power generated in a chip, measured by n-type sensors

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In