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TECHNICAL PAPERS

Finite Element Predictions of the Effect of Diffusion-Accommodated Interfacial Sliding on Thermal Stresses in Cu/Polymer Dielectric and Cu/Oxide Dielectric Single Level Damascene Interconnect Structures

[+] Author and Article Information
Nazri Kamsah, Todd S. Gross, Igor I. Tsukrov

Department of Mechanical Engineering, University of New Hampshire, Durham, NH 03824

J. Electron. Packag 124(1), 12-21 (Mar 08, 2001) (10 pages) doi:10.1115/1.1402629 History: Received October 15, 2000; Revised March 08, 2001
Copyright © 2002 by ASME
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References

Hu,  C.-K., Luther,  B., Kaufman,  F. B., Hummel,  J., Uzoh,  C., and Pearson,  D. J., 1995, Thin Solid Films, 262, p. 84.
Lee,  W. W., and Ho,  P. S., 1997, MRS Bull., XXII, 10, p. 19.
Licata,  T. J., Colgan,  E. G., Harper,  J. M. E., and Luce,  S. E., 1995, IBM J. Res. Dev., 39, No. 4, July, p. 419.
Harper,  J. M. E., Colgan,  E. G., Hu,  C.-K., Hummel,  J. P., Buchwaiter,  L. P., and Uzoh,  C. E., 1994, MRS Bull. XIX, 8, p. 23.
Andricacos,  P. C., Uzoh,  C., Dukovic,  J. O., Horkans,  J., and Deligianni,  H., 1998, IBM J. Res. Dev., 42, No. 5, Sept., p. 567.
Besser, P. R., Sanchez, J. E., Jr., Brennan, S., Bravman, J. C., Takaoka, G., and Yamada, I., 1994, Mater. Res. Symp. Proc. 343, Pittsburgh, PA: Mater. Res. Soc. p. 659.
Zmurkhin,  D. V., Gross,  T. S., Buchwalter,  L. P., and Kaufman,  F. B., 1996, J. Electron. Mater., 25, No. 6, p. 976.
Materials Handbook, 14th Edition, 1997, McGraw-Hill, p. 888.
Hu,  C.-K., and Harper,  J. M. E., 1998, Mater. Chem. Phys., 52, p. 5.
Ryan,  E. T., McKerrow,  A. J., Leu,  J., and Ho,  P. S., 1997, MRS Bull., XXII, 10, p. 49.
Chen,  S. T., and Wagner,  H. H., 1993, J. Electron. Mater., 22, No. 7, p. 797.
Zmurkhin,  D. V., Gross,  T. S., and Buchwalter,  L. P., 1997, J. Electron. Mater., 26, No. 7, p. 791.
Raj,  R., and Ashby,  M. F., 1971, Metall. Trans., 2, Apr., p. 1113.
Dmitry V. Zmurkhin, 1997, Ph.D. Dissertation, University of New Hampshire.

Figures

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Schematic cross-sections of typical damascene structures for SiO2 and for polymer dielectrics
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Map of the out-of-plane deformation around a 2 μm×4 μm Cu via resulting from a 20-350-20°C thermal cycle
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Map of the out-of-plane deformation around a 3 μm×4 μm Cu via resulting from a 20-350-20°C thermal cycle
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A representative section of the parallel line copper-Ta-polymer interconnect structure
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Finite element meshing of the SiO2-Cu and BCB-Cu systems having w/t ratio 0.2 and Ta thickness of 10 nm
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A sinusoidal interface of wavelength λ and amplitude h/2 subjected to a constant shear stress τa on the boundary (adopted from reference 13)
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The effect of w/t ratio on the Ta liner-plane stress in both BCB-Cu and SiO2-Cu systems
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The effect of the w/t ratio on the in-plane normal stress in both the BCB-Cu and SiO2-Cu systems
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The effect of Ta thickness on the shear stress at the dielectric-Ta interface in both the BCB-Cu and SiO2-Cu systems
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The effect of Ta thickness on the Ta liner-plane stress in both the BCB-Cu and SiO2-Cu systems
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The effect of Ta thickness on the in-plane normal stress on the dielectric-Ta interface in both the BCB-Cu and SiO2-Cu systems
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(a) The out-of-plane displacement profiles resulting from interface sliding BCB-Cu system for Ta liner thicknesses of 10 nm; (b) the out-of-plane displacement profiles resulting from interface sliding BCB-Cu system for Ta liner thicknesses of 50 nm.
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The out-of-plane displacement profile of BCB-Cu structure when the Cu-Cu sliding occurs at 500 nm away from the Cu-Ta interface. The w/t ratio is 20 and the Ta is 10 nm thick.
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(a) The sliding displacement in the SiO2-Cu system for 10 nm Ta thickness; (b) the sliding displacement in the SiO2-Cu system for 50 nm Ta thickness.
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The variation of stress relaxation time constant, τ, with temperature for both the BCB-Cu and SiO2-Cu systems
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The effect of width-to-thickness (w/t) ratio of the structure on the shear stress at the dielectric-Ta interface in both BCB-Cu and SiO2-Cu systems
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The effect of Cu-Ta sliding on the shear stress at the BCB-Ta interface for various w/t ratios
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The effect of the sliding on the SiO2-Ta shear stress in the SiO2-Cu system
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The effect of Cu-Ta sliding on the Ta liner-plane stress in the BCB-Cu system
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The effect of the Cu-Cu sliding on the shear stress on the dielectric-Ta interface in the BCB-Cu structure
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The effect of the Cu-Ta sliding on the Ta liner-plane stress in the SiO2-Cu system
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The effect of the Cu-Ta sliding on the in-plane normal stress on the dielectric-Ta interface in the BCB-Cu system, for various w/t ratios
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The effect of the Cu-Ta sliding on the in-plane normal stress on the dielectric-Ta interface in the SiO2-Cu system, for various w/t ratios

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