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SPECIAL SECTION ON THERMINIC

A Scalable Multi-Functional Thermal Test Chip Family: Design and Evaluation

[+] Author and Article Information
Zs. Benedek

Department of Electron Devices, Budapest University of Technology and Economics (formerly TUB), Budapest XI, Goldmann Gy. Tér 3, H-1111 Hungarye-mail: benedek@eet.bme.hu

B. Courtois

TIMA Laboratory, 46 Avenue Félix Viallet, 38031, Grenoble, Cedex Francee-mail: Bernard.Courtois@imag.fr

G. Farkas

MicReD Ltd., Budapest XI, Gulyás u.27, H-1112 Hungarye-mail: farkas@micred.com

E. Kollár

Department of Electron Devices, Budapest University of Technology and Economics, Budapest, Hungarye-mail: kollar@eet.bme.hu

S. Mir

TIMA Laboratory, 46 Avenue Félix Viallet, 38031, Grenoble, Cedex, Francee-mail: Salvador.mir@imag.fr

A. Poppe, M. Rencz

MicReD Ltd., Budapest XI, Gulyás u.27, H-1112 Hungary

V. Székely

Department of Electron Devices, Budapest University of Technology and Economics, Budapest, Hungarye-mail: szekely@eet.bme.hu

K. Torki

TIMA Laboratory, 46 Avenue Félix Viallet, 38031 Grenoble, Cedex, Francee-mail: kholdoun.torki@imag.fr

J. Electron. Packag 123(4), 323-330 (Jun 02, 2001) (8 pages) doi:10.1115/1.1389846 History: Received June 02, 2001
Copyright © 2001 by ASME
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References

Figures

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The measurement setup for the TMC81 chip
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The overall design of the multi-functional thermal test dies
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Study of the effect of the opening on the homogeniety of temperature distribution on the silicon surface: (a) simulation model (figure not in scale), (b) cross-sectional plot of temperature profile
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Composite designs containing four basic designs (with any size given in Table 1)
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Micro-photographs of the manufactured chip: (a) the 6×6 mm2 design, (b) close-up view of a dissipator-sensor cell
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Sensor characteristics of the TMC81 chip: (a) absolute, (b) differential from 25°C
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The 81 measured γ values of a TMC81 chip
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Dissipator characteristics at 25°C and 75°C
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Dissipator and sensor diode arrangements in two subsequent measurements
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Transient response of the D1,D2,D3 diodes, measured by the T3Ster equipment
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Cell temperature versus distance from the center of the dissipating area
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Thermal transient measurement using the CMOS sensors and boundary scan read-out
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Thermal transient responses to dissipation pattern (b) of Fig. 9, measured by the diodes
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Time constant spectrum extracted from the measured transient response
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Complex impedance diagrams
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Temperature map as shown by the control software of the TMC81 chip
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The structure of a dissipator/sensor cell

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