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TECHNICAL PAPERS

Die Attachment for −120°C to +20°C Thermal Cycling of Microelectronics for Future Mars Rovers—An Overview

[+] Author and Article Information
Randall K. Kirschman, Witold M. Sokolowski, Elizabeth A. Kolawa

Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109

J. Electron. Packag 123(2), 105-111 (Oct 20, 2000) (7 pages) doi:10.1115/1.1347996 History: Received October 20, 2000
Copyright © 2001 by ASME
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References

Figures

Grahic Jump Location
Coefficient of thermal expansion (CTE) for four materials used in microelectronics: silicon (Si), gallium arsenide (GaAs), alumina (polycrystalline Al2O3), and polycrystalline aluminum nitride (AlN) 52
Grahic Jump Location
Relative linear thermal expansion (ΔL/L) for silicon and alumina, normalized to 200°C 52
Grahic Jump Location
Relative linear thermal expansion (ΔL/L) for silicon and alumina, normalized to room temperature (+20°C) 52

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