0
TECHNICAL PAPERS

Warpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry

[+] Author and Article Information
K. Verma

Lucent Technologies, 9999 Hamilton Blvd., Breinigsville, PA 18031

B. Han

Department of Mechanical Engineering, University of Maryland, College Partk, MD 20742

J. Electron. Packag 122(3), 227-232 (Dec 20, 1999) (6 pages) doi:10.1115/1.1286315 History: Received April 13, 1999; Revised December 20, 1999
Copyright © 2000 by ASME
Your Session has timed out. Please sign back in to continue.

References

Han, B., Guo, Y., and Choi, H. C., 1993, “Out-of-plane Displacement Measurement of Printed Circuit Board by Shadow Moiré with Variable Sensitivity,” Proceedings of the 1993 ASME International Electronics Packaging Conference, September, Binghamton.
Yeh,  C.-P., Ume,  I. C., Fulton,  R. E., Wyatt,  K. W., and Stafford,  J. W., 1993, “Correlation of Analytical and Experimental Approaches to Determine Thermally Induced PWB,” IEEE Trans. Compon. Hybrids, Manuf. Technol., 16, No. 8, pp. 986–995.
Guo, Y., 1995, “Applications of Shadow Moiré Method in Determination of Thermal Deformations in Electronic Packaging,” Proceedings of the 1995 SEM Spring Conference, Grand Rapids, MI.
Stiteler,  M. R., Ume,  I. C., and Leutz,  B., 1996, “In-process Board Warpage Measurement in a Lab Scale Wave Soldering Oven,” IEEE Trans. Compon., Packag. Manuf. Technol., Part A, 19, No. 4, pp. 562–569.
Han, B., and Guo, Y., 1997, “Photomechanics Tools as Applied to Electronic Packaging Product Development,” Experimental/Numerical Mechanics in Electronics Packaging, Han, B., Mahajan, R., and Barker, D., eds., Society for Experimental Mechanics, Bethel, CT, Apr., Vol. 1, pp. 1–14.
Post, D., Han, B., and Ifju, P., 1994, High Sensitivity Moiré: Experimental Analysis for Mechanics and Materials, Springer-Verlag, NY.
Beckmann, P., and Spizzichino, A., 1963, The Scattering of Electromagnetic Wave from Rough Surface, Macmillan, New York.
Munnerlyn,  C. R. and Latta,  M., 1968, “Rough Surface Interferometry Using CO2 Laser Source,” Appl. Opt., 7, No. 9, pp. 1858–1859.
Kwon,  O., 1980, “Infrared Lateral Shearing Interferometers,” Appl. Opt. 19, No. 8, pp. 1225–1227.
Kwon,  O., Wyant,  J. C., and Hayslett,  C. R., 1980, “Rough Surface Interferometry at 10.6 μm,” Appl. Opt., 19, No. 11, pp. 1862–1869.
Lewandowski,  J., Mongeau,  B., Cormier,  M., and Lapierre,  J., 1986, “Infrared Interferometers at 10 μm,” J. Appl. Phys., 60, No. 10, pp. 3407–3413.
Lewandowski,  J., Mongeau,  B., Cormier,  M., and Lapierre,  J., 1986, “Infrared Holographic Interferometry,” Appl. Opt., 25, No. 18, pp. 3291–3296.
Sinha,  J., and Tippur,  H., 1998, “Infrared Interferometry for Rough Surface Measurements: Application to Failure Characterization and Flaw Detection,” Opt. Eng., 38, No. 8, pp. 2233–2239.
Meyer,  Y. H., 1981, “Fringe Shape with an Interferential Wedge,” J. Opt. Soc. Am., 71, No. 10, pp. 1255–1263.
Stover, J. C., 1995, Optical Scattering, SPIE Press, Bellingham, WA.
Verma, K., and Han, B., 2000, “Far Infrared Fizeau Interferometry,” Appl. Opt. (submitted for publication).
Han, B., Park, S.-B., Verma, K., and Ackerman, W., 2000, “On the Design Parameters of Flip-chip PBGA Package Assembly for Optimum Solder Ball Reliability,” IEEE Trans. Compon., Packag., Manuf. Technol., Part A (submitted for publication).

Figures

Grahic Jump Location
Schematic diagram of Fizeau interferometry with a small inclined incidence
Grahic Jump Location
(a) Optical path in Fizeau interferometry and (b) intensity distribution for the surfaces with various values of reflectivity
Grahic Jump Location
(a) Mechanical and (b) optical configuration of the far infrared Fizeau interferometer for real-time measurement
Grahic Jump Location
Infrared Fizeau fringes on a ground glass
Grahic Jump Location
Cross-sectional view of the FC-PBGA module and assembly
Grahic Jump Location
Warpage contours of FC-PBGA module, where contour interval is 5.31 μm per fringe order
Grahic Jump Location
Warpage contours of FC-PBGA package assembly, where contour interval is 5.31 μm per fringe order
Grahic Jump Location
W displacements of the silicon chip at various temperatures
Grahic Jump Location
W displacements of the substrate of the module as a function of temperature
Grahic Jump Location
Change in warpage from 140°C to −40°C along the vertical centerline
Grahic Jump Location
(a) Warpage contours of TSOP, where contour interval is 5.31 μm per fringe order (b) W displacements along the horizontal centerline

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In