Thermal Management Enhancement for GaAs Devices Using CVD Diamond Heat Spreaders in a Plastic Package Environment

[+] Author and Article Information
Philip M. Fabis, Henry Windischmann

St. Gobain Industrial Ceramics, Northboro Research Center, Goddard Road, Northboro, MA 01532

J. Electron. Packag 122(2), 92-97 (Sep 21, 1999) (6 pages) doi:10.1115/1.483139 History: Received May 18, 1999; Revised September 21, 1999
Copyright © 2000 by ASME
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Photograph of a 250 mm diameter, 1 mm thick CVD diamond wafer with thermal conductivity of 1200 w/mK
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X-ray photoelectron spectra of processed CVD diamond surfaces for plasma and vacuum annealing treatment conditions
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Cross-sectional schematic of a plastic IC package with CVD diamond heat spreader in overlap leadframe design
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CrCuNiAu metallized CVD diamond substrates with solder attached leadframe; (a) chip and wire configuration assembled without and with L-band, GaAs MESFET power amplifier; (b) flip-chip configuration assembled without and with L-band GaAs MESFET power amplifier
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Normalized maximum tensile stress (S1) in GaAs die attached to CVD diamond versus thickness of Cu and Au stress-relieving interlayers
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Insertion and return loss responses for a λ/4, 50 Ω coplanar transmission line on cvd diamond




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