0
TECHNICAL PAPERS

New Reworkable High Temperature Low Modulus (in Excess of 400–500 °C) Adhesives for MCM-D Assembly

[+] Author and Article Information
Jiali Wu, Randy T. Pike

Packaging Research Center, Georgia Institute of Technology, Atlanta, GA 30332-0245

S. K. Sitaraman

School of Materials Science and Engineering, The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332

C. P. Wong

Packaging Research Center, Georgia Institute of Technology, Atlanta, GA 30332-0245e-mail: cp.wong@mse.gatech.edu

J. Electron. Packag 122(1), 55-60 (Aug 31, 1999) (6 pages) doi:10.1115/1.483124 History: Received June 01, 1999; Revised August 31, 1999
Copyright © 2000 by ASME
Your Session has timed out. Please sign back in to continue.

References

Wong, C. P., 1993, Polymers for Electronic and Photonic Applications, Academic Press, San Diego, CA.
Van, G. L., and Ludlow, P., 1995, “MCM-D Consortium,” Proceedings of the 1995 International Conference on Multichip Modules, SPIE, 2 , pp. 249–252.
Lau, J. H., 1994, Chip on Board Technologies for Multichip Modules, Van Nostrand Reinhold, pp. 31–35.
Suhir, E., 1986, “Calculated Thermally Induced Stresses in Adhesively Bonded and Soldered Assemblies,” Proceedings, 1986 International Symposium on Microelectronics, pp. 383–392.
Shaw, S. J., and Kinloch, A. J., 1984, “High-Temperature Adhesives,” International Adhesion Conference, pp. 3.1–3.4.
Shaw,  S. J., 1996, “Adhesives in Demanding Application,” Polym. Int., 41, pp. 193–207.
Bowditch,  M. R., and Shaw,  S. J., 1996, “Adhesive Bonding for High Performance Materials,” Adv. Perform. Mater, 33-4, pp. 324–342.
Chen, K. M., Wang, T. H., King, J. S., Tamai, S., and Ohta, M., 1990, Polyimide and High-Temperature Adhesive Thereof, U.S. Patent 4,931,531.
Oikawa, H., and Ohta, M., 1989, High-Temperature Adhesive Polyimide From 2,6-Bis (3-Aminophenoxy) Pyridine, U.S. Patent 4,797,466.
Townsend, T., D. Schmidt, D., Stokich, T., Kisting, S., Burdeaux, D., Frye, D., Bernius, M., Lanka, M., and Berry, K., 1993, “Adhesion of CYCLOTENE (BCB) Coatings on Silicon Substrates,” Proceedings of MRS, Boston, MA, Vol. 323, pp. 365–370.
Shick, R. A., Goodall, B. L., McIntosh, L. H., Jayaraman, S., Kphl, P. A., Bidstrup, S. A., and Grove, N. R., “New Olefinic Interlevel Dielectric Materials for Multi-Chip Modules,” IEEE, accepted for publication.
Ying, L., 1986, “A Reworkable High Reliability Thermoplastic Die Attach Adhesive,” Proceedings, International Symposium on Microelectronics, pp. 621–631.
Wong, C. P., Wu, J. L., and Pike, R. T., 1998, “Characterization of Reworkable High-Temperature Adhesives for MCM-D Application,” J. Appl. Polym. Sci., in press.
Timoshenko,  S. P., 1925, “Analysis of Bi-Metal Thermostats,” J. Opt. Soc. Am. 23, pp. 233–255.
Noll, W., 1968, Chemistry and Technology of Silicones, Academic Press, New York.
Voronkov, M. G., and Mileshkevich, V. P., 1978, The Silicone Bond, Consultants Bureau, New York.
Center for Information and Numerical Data Analysis and Synthesis (CINDAS), 1995, CINDAS Report 113, Purdue University, West Lafayette, IN.

Figures

Grahic Jump Location
Results of TGA on HTLM base resin series with a heating rate of 20°C/min
Grahic Jump Location
Thermal stability comparison of the HTLM (A:B=1:1) adhesives with and without thermal stabilizer
Grahic Jump Location
Viscosity varies with shear rate with respect to the A:B ratios at 25°C
Grahic Jump Location
Film thickness varies with spin rate within the same coating time (t=30 s) (HTLM, A:B=1:1, 0.2 percent thermal stabilizer)
Grahic Jump Location
Relation between adhesion strength and film thickness on HTLM (A:B=1:11, 0.2 percent thermal stabilizer) adhesive
Grahic Jump Location
Adhesion varies with A:B ratio with respect to different thermal processes
Grahic Jump Location
Polydimethylsiloxane molecules spread on a substrate in a preferential orientation
Grahic Jump Location
Optomicroscopic analysis on the morphology of HTLM adhesive changed with different thermal processes (a) after curing, (b) 400°C/60 min, and (c) 450°C/60 min
Grahic Jump Location
Mechanism schematic of thermal metal stabilizer
Grahic Jump Location
Schematic of sixteen 127 mm silicon wafer tiles adhesive-bonded to a 600×600 mm square glass pallet
Grahic Jump Location
Schematic of two-dimensional FE model for silicon wafer on glass
Grahic Jump Location
Two-dimensional schematic of silicon tile on glass substrate (quarter model)
Grahic Jump Location
σxx in pallet versus adhesive modulus
Grahic Jump Location
σxx in tile versus adhesive modulus

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In