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TECHNICAL PAPERS

On the Mechanical Reliability of Photo-BCB-Based Thin Film Dielectric Polymer for Electronic Packaging Applications

[+] Author and Article Information
Jang-hi Im, Edward O. Shaffer, Theodore Stokich, Andrew Strandjord, Jack Hetzner, James Curphy, Cheryl Karas

The Dow Chemical Company, Advanced Electronic Materials Laboratory, 1712 Building, Midland, MI 48674

Greg Meyers, David Hawn, Ashok Chakrabarti, Steve Froelicher

The Dow Chemical Company, Analytical Laboratory, 1897 Building, Midland, MI 48674

J. Electron. Packag 122(1), 28-33 (Oct 20, 1999) (6 pages) doi:10.1115/1.483128 History: Received June 01, 1999; Revised October 20, 1999
Copyright © 2000 by ASME
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References

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Figures

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Schematic of m-ELT specimen with a backing layer
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Interfacial fracture energy, Gc, of Cyclotene 4024 to various surfaces, showing improved adhesion by using the adhension promoter, AP-3000
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Low magnification optical micrograph of m-ELT fracture surface of the substrate side of photo-BCB/Si sample with promoter incorporated, showing feather-like rough texture (A), failure into the silicon (B), and smooth texture (C)
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Perspective view of AFM images from area “A” in Fig. 4, showing ridges of Photo-BCB
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Perspective view of AFM images of substrate side of fractured Cyclotene 4024/Si interface (a) without promoter and (b) area “C” in Fig. 4 (with promoter)
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High resolution silicon (2p) XPS spectra of the fracture surfaces, matching AFM areas of (a) Fig. 6(a) and (b) Fig. 6(b). Spectra have been shifted on the binding energy axis to correct for sample charging.
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Moisture uptake (84 percent RH, 23°C) and drying (0 percent RH, 23°C) with time, for 5 μm film from Cyclotene 4024
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Plot of total sample weight during isothermal exposure of 10 μm film from Cyclotene 4026 on thermally oxidized silicon wafer at 350°C in helium purge
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Weight loss rate constant versus 1/T for 10 μm film from Cyclotene 4026, showing activation energy of 36.5 Kcal/mol

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