Towards an Integrated Approach for Analysis and Design of Wafer Slicing by a Wire Saw

[+] Author and Article Information
R. K. Sahoo, V. Prasad, I. Kao

Department of Mechanical Engineering, State University of New York, Stony Brook, NY 11794-2300

J. Talbott, K. P. Gupta

GT Equipment Technologies Inc., Nashua, NH 03063

J. Electron. Packag 120(1), 35-40 (Mar 01, 1998) (6 pages) doi:10.1115/1.2792283 History: Received January 01, 1996; Revised August 19, 1997; Online November 06, 2007


Crystalline and polycrystalline ingots of silicon and other materials need to be cut into thin wafers for microelectronics, photovoltaics, and many other applications. For slicing process to be cost-effective, the kerf loss should be minimum and the surface finish should be of a high quality. Wire saw can meet these demands and is considered to be a potentially better technology than the inner diameter (ID) saw. An initial study of the current technology shows that the wire saw cutting is a poorly understood process, and no model exists for simulation, design, and control of this process. The wire saw slicing process can be well modeled as a cutting process, where the initial fracture occurs because of the stress distribution between the two surfaces subjected to compressive loading and sliding friction. A preliminary analysis is carried out using a standard finite element method to develop a better understanding of this process and to determine possible ways of improving the process design. The results of vibration (modal) and thermal stress analyses show that an accurate prediction of the effects of process parameters would help in improving the wire saw design. Similarly, a proper feedback control algorithm would enable a better control of the process by using on-line information on wire tension and stiffness, temperature, and other relevant quantities. A methodology for systematic approach to analysis and design of an advanced wire saw process is also outlined.

Copyright © 1998 by The American Society of Mechanical Engineers
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