0
RESEARCH PAPERS

Temperature Dependence of the Mechanical Properties of GaAs Wafers

[+] Author and Article Information
Jun Ming Hu, Michael Pecht

CALCE Center For Electronic Packaging, University of Maryland, College Park, MD 20742

J. Electron. Packag 113(4), 331-336 (Dec 01, 1991) (6 pages) doi:10.1115/1.2905416 History: Received October 25, 1990; Revised June 30, 1991; Online April 28, 2008

Abstract

GaAs is known to have superior electronic properties and greater photovoltaic conversion efficiency compared to elemental semiconductors such as silicon and germaniumn. Mechanical properties of GaAs at different temperatures are now necessary to incorporate into the design models for the GaAs die attach and substrate architecture for microelectronic packages. These properties are also required to aid in defining reliability and screening specifications. This paper presents the experiment results on various material properties of GaAs wafer over the temperature range of − 75°C to 200°C. Material properties determined from testing include the modulus of elasticity, the modulus of rupture, the critical value of stress intensity factor, and the coefficient of thermal expansion. The importance of fracture assessment in semiconductor devices is also discussed.

Copyright © 1991 by The American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.

References

Figures

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In