Thermal Strain Measurements in Electronic Packages Through Fractional Fringe Moiré Interferometry

[+] Author and Article Information
A. F. Bastawros

Homer Research Laboratories, Bethlehem Steel Corporation, Bethlehem, Pa 18016

A. S. Voloshin

Department of Mechanical Engineering, Lehigh University, Bethlehem, Pa 18015

J. Electron. Packag 112(4), 303-308 (Dec 01, 1990) (6 pages) doi:10.1115/1.2904382 History: Received June 28, 1990; Revised October 14, 1990; Online April 28, 2008


Fractional Fringe Moiré Interferometry (FFMI)—a new experimental methodology to measure accurately deformations and consequently strains—has been successfully implemented to determine thermally induced strains in a specimen made from an AT&T 1MB DRAM device. The specimen was heated uniformly from room temperature to 90° C. Resulting moiré fringe patterns were recorded, analyzed using digital-image-processing and in plane displacements in the device were determined. Strain components were computed by simple differentiation of the displacement fields. The technique proved to be successful in detecting full displacement fields with submicron resolution. Contour maps showing actual thermo/mechanical strain components in the specimen were constructed. Those maps can provide an excellent tool realistic for strain analysis of microelectronic devices regardless of the structural and material complexity.

Copyright © 1990 by The American Society of Mechanical Engineers
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